碲镉汞红外探测器性能调控技术研究  

Research on Performance Regulation Technology ofHgCdTe Infrared Detector

作　　者：何温 王丛[1] 田震[1] 王鑫[1] 高达[1] 杨海燕[1] 柏伟[1] HE Wen;WANG Cong;TIAN Zhen;WANG Xin;GAO Da;YANG Hai-yan;BAI Wei(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2021年第12期6-14,共9页Infrared

基　　金：西安市智能探视感知重点实验室项目(201805061ZD12CG45)。

摘　　要：对影响Hg_(1-x)Cd_(x)Te红外探测器性能的不同调控技术——包括材料调控(组分及温度、掺杂浓度、压强及应力等对材料性能的调控)、器件结构调控(n-on-p、p-on-n、p-i-n、n-B-n等器件结构的调控)和工艺调控(各种工艺调控对材料制备和器件制备等的影响)等——进行了简单介绍,以合理调控器件性能、有效降低器件暗电流、提高器件工作温度等,从而促进Hg_(1-x)Cd_(x)Te红外探测器在降低成本、减小功耗、提高可靠性等方面的发展。Different regulation technologies that affect the performance of Hg_(1-x)Cd_(x)Te infrared detectors are briefly introduced,including material regulation(composition and temperature,doping concentration,pressure,and stress,etc.),device structure regulation(n-on-p,p-on-n,p-i-n,n-B-n,etc.),and process regulation(the influence of various process regulation on material preparation and device preparation).This research aims to properly regulate device performance,effectively reduce the dark current of the device,and improve the operating temperature of the device,so as to promote the development of Hg_(1-x)Cd_(x)Te infrared detectors in reducing costs,decreasing power consumption,and improving reliability.

关 键 词：红外探测器 Hg_(1-x)Cd_(x)Te 调控技术 

分 类 号：TN215[电子电信—物理电子学]