栅控静电防护器件的电路宏模型研究  

Research on circuit macro-model of gate-controlled electrostatic protection device

作　　者：刘煜杰 汪洋 金湘亮 LIU Yujie;WANG Yang;JIN Xiangliang(School of Physics and Electronics,Hunan Normal University,Changsha 410081,Hunan,China)

机构地区：[1]湖南师范大学物理与电子科学学院,湖南长沙410081

出　　处：《微电子学与计算机》2021年第12期69-74,共6页Microelectronics & Computer

基　　金：国家自然科学基金(61827812);湖湘高层次人才聚集项目(2019RS1037);湖南省科技厅项目(2020GK2018,2019GK4016,2020RC1003)。

摘　　要：本文设计了一种新型栅控双向可控硅晶闸管(GDDSCR)防护器件,用Rx元件代替可控硅晶闸管(SCR)的触发面来模拟SCR的触发和保持行为,实现了一种用于静电放电(ESD)防护的SCR宏模型.基于0.18μm BCD工艺制造的GDDSCR器件的传输线脉冲(TLP)测试结果与模型仿真结果的触发电压误差为0.008V,维持电压误差为0.006V.实验结果表明建立的SCR宏模型能够有效地模拟SCR器件在ESD应力下的物理机制.该宏模型以直.接的方式从被保护电路中使用的相同SCR结构中提取相关参数,大大提高了建模效率,消除了传统SCR模型仿真过程中存在的收敛性问题,对ESD保护电路的设计与验证具有重要意义.In this paper,a new type of gate-controlled dual direction silicon controlled rectifier(GDDSCR)protection device is designed.Rx elements are used to replace the trigger surface of the silicon controlled rectifier(SCR)to simulate the triggering and holding behavior of SCR,and a SCR macro model for ESD protection is realized.The trigger voltage error between the transmission line pulse(TLP)test results and the model simulation results of the GDDSCR device manufactured by 0.18μm BCD process is 0.008V,and the sustain voltage error is 0.006V.The experimental results show that the established SCR macro model can effectively simulate the physical mechanism of SCR devices under ESD stress.The macro model directly extracts the relevant parameters from the same SCR structure used in the protected circuit,which greatly improves the modeling efficiency and eliminates the convergence problem in the simulation process of the traditional SCR model.It is of great significance to the design and verification of ESD protection circuit.

关 键 词：静电放电防护 可控硅晶闸管 建模 宏模型 

分 类 号：O475[理学—半导体物理]