28nm超薄体FD-SOI高温输出电流特性研究  

Investigation on high-temperature performance of 28nm UTB FDSOI

作　　者：张颢译 曾传滨[1,2] 李晓静 闫薇薇[1,2] 倪涛[1,2] 高林春[1,2] 罗家俊 赵发展[1,2] 韩郑生[1,2,3] ZHANG Haoyi;ZENG Chuanbin;LI Xiaojing;YAN Weiwei;NI Tao;GAO Linchun;LUO Jiajun;ZHAO Fazhan;HAN Zhengsheng(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《微电子学与计算机》2021年第12期75-79,共5页Microelectronics & Computer

摘　　要：针对高温引起MOSFET(金属氧化物半导体场效应晶体管)器件饱和输出电流值发生退化的问题,开展了对SOI(绝缘体上硅)工艺器件的高温特性分析.结果表明FDSOI的饱和输出电流随温度变化值ΔI/I=1.9%,远小于PDSOI的ΔI/I=24.1%.其原因是超薄体FD(全耗尽)SOI的结构优势使其和PD(部分耗尽)SOI相比拥有更,低的阈值电压温度漂移率和更小的载流子迁移率改变量.For the degradation of saturated output current value of MOSFET(Metal Oxide Semiconductor Field Effect Transistor)devices caused by high temperature,the high temperature characteristics of SOI(Silicon-On-Insulator)process devices are analyzed.The results show that the saturated output current of FDSOI varies with temperatureΔI/I=1.9%,much smaller than PDSOI’sΔI/I=24.1%.The reason for this is that the structural advantage of the ultra-thin FD(Full Depletion)SOI results in lower threshold voltage temperature drift and smaller carrier mobility change compared with the PD(Partial Depletion)SOI.

关 键 词：高温器件 超薄体FDSOI 输出电流 载流子迁移率 

分 类 号：TN432[电子电信—微电子学与固体电子学]