一种多米诺逻辑电路抗辐照加固方法  

A method for anti radiation domino logic circuit

作　　者：蒲佳 何善亮 范超 PU Jia;HE Shanliang;FAN Chao(Chengdu Corpro Technology CO.,LTD,Chengdu 610041,Sichuan,China)

机构地区：[1]成都振芯科技股份有限公司,四川成都610041

出　　处：《微电子学与计算机》2021年第12期99-104,共6页Microelectronics & Computer

基　　金：国家科技重大专项(2017ZX01009103)。

摘　　要：设计了一种用于电流舵DAC电流开关的高速编码逻辑电路.为了实现高运算速率,该电路采用多米诺结构;为了增强抗辐照能力,采用电阻电容双互锁结构进行加固。通过远程测试平台进行抗单粒子效应实测,普通电路在LET值为37.2 MeV·cm/mg条件下,在离子总注量累积4.3×10^(6)ions/cm^(2)时,软错误次数便达到100次;而加固后的电路在同样的LET值下,离子总注量累积到10^(7)ions/cm^(2)时,软错误次数仅为24次,抗SET及SEU能.力大大加强.A high-speed coding logic circuit for current switch of current steering DAC is designed.In order to achieve high operation speed,the circuit adopts domino structure,and in order to enhance the anti irradiation ability,the circuit adopts the RC-DICE structure.Through the measurement of anti SEE on the remote test platform,the soft errors reached 100 times when the LET value is 37.2 MeV·cm^(2)/mg until the total ion implantation amount is 4.3×10^(6)ions/cm^(2),the soft errors of the hardened circuit is only 24 times at the same LET value until the total ion implantation amount is 10^(7)ions/cm^(2).The result shows that the ability of anti SETT and SEU is greatly enhanced.

关 键 词：高速DAC电路 多米诺结构 电阻电容双互锁 单粒子效应 

分 类 号：TN492[电子电信—微电子学与固体电子学]