基于ALD技术的高性能光电探测器研究进展  

Research Progress of High-Performance Photodetectors Based on Atomic Layer Deposition Technology

作　　者：胡鲲 翟爱平 冯琳 石林林 冀婷 李国辉 崔艳霞 Hu Kun;Zhai Aiping;Feng Lin;Shi Linlin;Ji Ting;Li Guohui;Cui Yanxia(College of Physics and Optoelectronics,Taiyuan University of Technology,Taiyuan Q3QQ24,China)

机构地区：[1]太原理工大学物理与光电工程学院,太原030024

出　　处：《半导体技术》2021年第12期909-920,共12页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61922060,61775156,61805172,61905173);山西省重点研发国际合作项目(201803D421044);山西省自然科学基金面上青年基金资助项目(201901D211115);霍英东教育基金会高等院校青年教师基金(20171402210001);山西省高等学校科技成果转化培育项目(2020CG013);吕梁市高层次科技人才引进专项项目(Rc2020207);山西省平台与基地专项(201805D131012-3)。

摘　　要：采用原子层沉积(ALD)技术制备的薄膜具有致密性高、保形性高、平滑性好、缺陷密度低、厚度可精准调控等优势,被广泛应用于各类光电器件中。利用ALD技术制备的功能薄膜可以明显改善光电探测器的暗电流、探测率和线性动态范围等性能。以基于ALD技术的高性能光电探测器为主题,首先详细介绍了热ALD生长薄膜的基本原理,同时简要介绍了等离子体增强ALD技术生长薄膜的基本原理。然后依据光电探测器中薄膜的功能不同,依次总结了基于ALD技术制作的活性层、钝化层、界面层、电荷传输层等实现高性能光电探测器的研究进展。最后对ALD技术在光电探测器领域的发展趋势和挑战进行了展望。The films prepared by atomic layer deposition(ALD) technology have the advantages of high density, good conformality, good smoothness, low defect density, precise controllability of film thickness, etc.,which are widely used in various optoelectronic devices.The functional films prepared by ALD technology can significantly improve the performance of photodetectors including dark current, detectivity, linear dynamic range and so on.With the high-performance photodetectors based on ALD technology as the theme, the basic film growth principles of thermal ALD are first introduced in detail, and the basic film growth principles of plasma-enhanced ALD technology are briefly introduced.Sub-sequently, according to the different functions of the film in the photodetector, the research progresses of high-performance photodetectors based on the active layer, passivation layer, interfacial layer and carrier transport layer prepared by ALD technology are introduced in turn.Finally, the development trends and challenges of ALD technology in the field of photodetectors are prospected.

关 键 词：原子层沉积(ALD)技术 光电探测器 活性层 钝化层 界面层 

分 类 号：TN36[电子电信—物理电子学]