用于GaN HEMT栅驱动芯片的高精度欠压保护电路  

High Precision Under-Voltage Protection Circuit for GaN HEMT Gate Driver Circuit

作　　者：陈恒江 潘福跃 周德金 何宁业 陈珍海 CHEN Hengjiang;PAN Fuyue;ZHOU Dejin;HE Ningye;CHEN Zhenhai(Wuxi I-Core Electronics Co.,Ltd.,Wuxi 214035,China;China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China;School of Microelectronics,Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China;Engineering Technology Research Center of Intelligent Microsystems,Huangshan University,Huangshan 245041,China)

机构地区：[1]无锡中微爱芯电子有限公司,江苏无锡214035 [2]中科芯集成电路有限公司,江苏无锡214072 [3]复旦大学微电子学院,上海200443 [4]清华大学无锡应用技术研究院,江苏无锡214072 [5]黄山学院智能微系统安徽省工程技术研究中心,安徽黄山245041

出　　处：《电子与封装》2021年第12期50-53,共4页Electronics & Packaging

基　　金：安徽省重点研究与开发计划(201904b11020007);安徽省高校自然科学研究项目(KJHS2020B07);智能微系统安徽省工程技术研究中心开放课题(MSZXXM2004)。

摘　　要：设计了一种用于GaN HEMT器件栅驱动芯片、能提供快速响应高精度阈值电压的高精度欠压保护电路。该电路一方面采用宽电压摆幅和快速响应的两级比较器电路来提高处理速度;另一方面,输出整形电路采用RC低通滤波和两级施密特触发器组合滤波,以滤除高频噪声的影响,产生稳定可靠的欠压保护输出信号。基于0.18μm BCD工艺,完成了电路设计验证,仿真结果显示电路功能正确,可满足GaN HEMT器件栅驱动芯片应用要求。A high precision under-voltage protection circuit for GaN HEMT device gate driver is designed,which will provide high precision threshold voltage with fast response.On the one hand,a two-stage comparator circuit with wide voltage swing and fast response is adopted to improve processing speed.On the other hand,the RC low-pass filtering and two-stage Schmidt trigger combined filtering is used in output shaping circuit to filter out the influence of high frequency noise,and finally to generate the reliable under-voltage protection output signal.The circuit is designed and verified on 0.18μm BCD process.The simulation results show that the circuit function is correct,which can meet the requirements of GaN HEMT device gate driver.

关 键 词：欠压保护 比较器 高精度 

分 类 号：TN402[电子电信—微电子学与固体电子学]