肖特基二极管毫米波等效电路模型参数提取方法  

A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model

作　　者：黄惠琳 黄静[1] 施佺[1] HUANG Hui-Lin;HUANG Jing;SHI Quan(School of Information Science and Technology,Nantong University,Nantong 226019,China)

机构地区：[1]南通大学信息科学技术学院,江苏南通226019

出　　处：《红外与毫米波学报》2021年第6期732-737,共6页Journal of Infrared and Millimeter Waves

基　　金：江苏省“333工程”人才项目(BRA2017475);应急管理部消防救援局科研计划项目(2019XFCX33)。

摘　　要：提出了一种肖特基二极管的毫米波等效电路模型参数提取方法。该方法利用开路测试结构确定焊盘电容,并结合短路测试结构确定馈线电感;基于直流Ⅰ-Ⅴ特性曲线和小信号S参数分别提取了寄生电阻并进行了对比分析;给出了本征元件随偏置电压的变化曲线。在频率高达40 GHz的范围内,截止和导通状态下S参数的模拟与测试数据吻合良好,验证了提取方法的有效性。A millimeter wave equivalent circuit model parameters extraction method for Schottky diodes is proposed in this paper.The pad capacitance has been determined by using open circuit test structure,and the feedline inductance has been determined by using short-circuit test structure.The parasitic resistance has been extracted by using DC method and AC method respectively.An excellent fit between measured and simulated S-parameters in the frequency range of 1~40 GHz is obtained for GaAs Schottky diode.

关 键 词：肖特基二极管 等效电路模型 参数提取 

分 类 号：TN315.3[电子电信—物理电子学]