面向先进光源的硅像素传感器保护环结构仿真研究  

Research on Structure Simulation of Silicon Pixel Sensor Guard Ring for Advanced Light Source

作　　者：孙朋 傅剑宇[1,2] 许高博 丁明正[1] 翟琼华 殷华湘[1,2] 陈大鹏 SUN Peng;FU Jianyu;XU Gaobo;DING Mingzheng;ZHAI Qionghua;YIN Huaxiang;CHEN Dapeng(Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [2]中国科学院大学,北京100049

出　　处：《光子学报》2021年第12期186-193,共8页Acta Photonica Sinica

基　　金：中国科学院重大科研仪器研制项目(No.ZDKYYQ20200007)。

摘　　要：硅像素传感器上的保护环结构有利于提高传感器的耐高电压性能,为评估保护环结构对硅像素传感器的保护效果,仿真分析了三种保护环结构。通过计算机辅助设计技术对三种保护环结构进行二维建模,利用TACD内置的电学模型对三种保护环结构的I-V特性进行了仿真。研究结果表明,电流收集环会提高像素的耐高电压性能,同时不等间距保护环、保护环的内外等距离Al悬挂以及多个保护环结构有利于进一步提高传感器的击穿电压。The guard ring structure on the silicon pixel sensor is beneficial to improve the high voltage withstand performance of the sensor.In order to evaluate the protection effect of the guard ring structure on the silicon pixel sensor,three kinds of guard ring structures are simulated and analyzed.Two-dimensional modeling of the three guard ring structures was carried out by Technology Computer Aided Design,and the I-V characteristics of the three guard ring structures were simulated using the electrical model built in the software.The existence of the current collecting ring can make the pixel withstand high voltage,and the unequal-spaced guard ring,The different space guard ring,the inner and outer equidistant Al suspension of the guard ring,and the multiple guard ring structures are beneficial to further increase the breakdown voltage of the sensor.

关 键 词：PIN二极管 硅像素传感器 保护环 耐高电压 计算机辅助设计 

分 类 号：O436[机械工程—光学工程]