基于不同键合参数的Cu-Sn-Cu微凸点失效模式分析  

Failure Mode of Cu-Sn-Cu Micro-Bumps Based on Different Bonding Parameters

作　　者：张潇睿 ZHANG Xiaorui(Aviation Engineering College,Civil Aviation Flight University of China,Guanghan 618307,China)

机构地区：[1]中国民用航空飞行学院航空工程学院,四川广汉618307

出　　处：《电子与封装》2022年第1期1-6,共6页Electronics & Packaging

摘　　要：电迁移已经成为影响微电子产品可靠性最严重的问题之一,长时间电流负载下,互连金属凸点内部由于空洞、裂纹等缺陷导致产品失效风险提高。为了研究不同键合参数下互连金属微凸点的失效模式,基于CB-600倒装键合机,得到了不同键合质量的芯片,并在不同电流密度负载下进行试验,得到了凸点组织演变行为及失效模式,为产品实际使用过程中可能出现的问题提供了参考。Electromigration has become one of the most serious problems affecting the reliability of microelectronic products.Cavity and crack are formed in the solder joint under long time current load.These factors lead to increased risk of product failure.In order to study the failure mode of interconnected micro-bumps under different bonding parameters,chips are bonded by CB-600 bonding machine.The samples with different bonding quality are loaded under different current.The microstructural evolution of the bumps and the failure mode of bumps are obtained.It provides a reference for the problems of product during working time.

关 键 词：键合参数 失效模式 微凸点 可靠性 

分 类 号：TN305.94[电子电信—物理电子学]