LDO失效分析及改善  

LDO Failure Analysis and Countermeasure

作　　者：胡敏 HU Min(Leshan Radio Co.,Ltd.,Leshan 614000,China)

机构地区：[1]乐山无线电股份有限公司,四川乐山614000

出　　处：《电子与封装》2022年第1期27-30,共4页Electronics & Packaging

摘　　要：低压差线性稳压器(Low Dropout Regulator,LDO)新品导入中,过强的铜线焊接会使焊球下芯片层间电介质层(Interlayer Dielectric,ILD)产生裂纹,从而导致器件测试漏电流失效或可靠性失效。通过对芯片结构的分析,指出LDO漏电流失效的原因,同时详细讨论了如何确定合理的铜线焊接参数、如何检测失效以及失效分析步骤。Final test leakage failure or reliability failure is common in low dropout regulator(LDO)new product introduction,it is mostly due to interlayer dielectric(ILD)crack under bonding pad caused by over copper wire bonding.Through the analysis of the chip structure,the causes of LDO leakage failure are pointed out.At the same time,how to determine reasonable copper wire bonding parameters,how to detect the defects and failure analysis steps are discussed in details.

关 键 词：低压差线性稳压器 铜线焊接 漏电流失效 可靠性 ILD层裂纹 

分 类 号：TN605[电子电信—电路与系统]