不同放电模式对粒子获得方式及TiN薄膜微观结构的影响  

Effect of Discharge Mode on the Leave-Target Mechanism of Particles and the Microstructure of TiN Films

作　　者：杨超[1] 郝娟[1] 蒋百灵[1] 王旭[1] 王戎 周克崧 Yang Chao;Hao Juan;Jiang Bailing;Wang Xu;Wang Rong;Zhou Kesong(Xi’an University of Technology,Xi’an 710048,China;Institute of New Materials,Guangdong Research Institute of Industrial Technology,Guangzhou 510651,China)

机构地区：[1]西安理工大学,陕西西安710048 [2]广东省工业技术研究院新材料研究所,广东广州510651

出　　处：《稀有金属材料与工程》2021年第11期4059-4065,共7页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(52001251)。

摘　　要：在当前薄膜制备技术中,电弧离子镀因靶材表面发生电弧放电局部熔融,导致沉积粒子中夹杂微米尺度高温颗粒,引发薄膜表面粗糙和基体高温损伤;直流磁控溅射因辉光放电产生的等离子体碰撞溅射靶材表面,导致溅射出的粒子离化率低,引起薄膜厚度不均和组织疏松。为解决以上问题,依据气体放电等离子体物理学知识,采用新型阶梯式双级脉冲电场诱发阴极靶材与阳极腔体间气体微弧放电,依靠微弧放电后产生的高密度等离子体,增强Ar^(+)对靶面的轰击动能和靶面产生的焦耳热,实现将粒子的获得方式由碰撞溅射转变为热发射方式,以此提高粒子的离化率,达到改善薄膜结构的目的。实验结果表明:双级脉冲电场诱发的气体微弧放电呈现出耀眼白光,靶面形貌表现出高低起伏的凹坑及水流波纹,此形貌不同于粒子碰撞溅射后的多边形凹坑形貌,说明靶面局部区域的粒子发生了热发射现象。同时,制备的TiN薄膜具有较为致密的组织,且沉积速率可达51 nm/min。The current mainstream deposition technologies of thin film are arc ion plating(AIP)and dc magnetron sputtering(DCMS).The deposited particles of AIP leave target by melt splashing mode,which is easy to cause overheating and surface coarsening of the substrate.The collision sputtering of deposited particles with low sputtering yield of DCMS causes low ionization rate,which easily causes uniform film thickness and loose structure.Above shortcomings reduce the service life of the film and wide promotion of technology.Based on the physical knowledge of gas discharge plasma,a new dual-stage pulsed electric field is used to induce gas micro-arc discharge between the cathodic target and the anodic chamber.The high-density plasma generated by micro arc discharge enhances the bombardment of Ar^(+)and the Joule heat on the target surface.The collision enhanced thermal emission of the deposited particles can be realized,thereby increasing the ionization rate of particles and improving the film structure.The results show that the gas micro-arc discharge induced by dual-stage pulsed electric field exhibits dazzling white light.The surface morphology of the target shows the morphology of polygonal pits and corrugations,which is different from the polygonal pits after sputtering process of deposited particles.It shows that the particles leave target via collision sputtering and thermal emission.At the same time,the TiN film deposited by the dual-stage pulsed electric field has a relatively dense structure,and the deposition rate could reach 51 nm/min,which is significantly improved compare with that deposited by the high power pulsed magnetron sputtering.

关 键 词：双级脉冲电场 微弧放电 热发射 TIN薄膜 

分 类 号：TB43[一般工业技术]