CdS薄膜/p-Si异质结的制备及其光伏性能研究  

The Preparation of CdS Thin Film/p-Si Heterojunction and Its Photovoltaic Properties

作　　者：殷邦盛 周小岩 廖龙强 李羽裳 黄超 YIN Bangsheng;ZHOU Xiaoyan;LIAO Longqiang;LI Yuchang;HUANG Chao(College of Science,China University of Petroleum,Qingdao Shandong 266580,China)

机构地区：[1]中国石油大学(华东)理学院,山东青岛266580

出　　处：《江西师范大学学报（自然科学版）》2021年第5期468-472,共5页Journal of Jiangxi Normal University(Natural Science Edition)

基　　金：国家自然科学基金(51777215);大学生创新创业训练计划(202012072,20190526)资助项目。

摘　　要：采用喷雾热解法在p型单晶硅(Si)上制备了硫化镉(CdS)薄膜,分支结构的金属Au作为正电极、金属铟作为背电极构成CdS薄膜/Si异质结光电器件.采用X-射线衍射(XRD)和原子力显微镜(AFM)对样品的晶体微结构及表面形貌进行表征,并通过紫外可见光谱研究CdS薄膜的光学吸收性能.最后,通过数字源表Keithley2400和高精度数字电桥TH2828测试异质结器件在不同光照强度(10、20、30、75、100、150 mW·cm^(-2))下的伏安特性、光电导率和交流阻抗.CdS(CdS)thin films are prepared on p-type mono-crystalline silicon(Si)by spray pyrolysis.The CdS thin films/Si heterojunction photoelectric devices are fabricated by branching metal Au as the positive electrode and indium as the back electrode.The crystal microstructure and surface morphology of the samples are characterized by X-ray diffraction(XRD)and atomic force microscopy(AFM).The optical absorption properties of CdS thin films are studied by UV-Vis spectroscopy.The voltage-current characteristics,photoconductivity and AC impedance of heterojunction under different light intensities(10,20,30,70,100,150 mW·cm^(-2))are measured by digital source-meter Keithley2400 and high precision digital bridge TH2828.

关 键 词：CdS/p-Si异质结 伏安特性 光电导率 交流阻抗 

分 类 号：O475[理学—半导体物理] TN36[理学—物理]