Na掺杂MoO_(3)陶瓷靶材的制备及其成膜性能研究  

Preparation and film forming properties of Na doped MoO_(3) ceramic target

作　　者：雷金坤 李继文[1] 李召阳 刘伟[1,2] 徐流杰 LEI Jinkun;LI Jiwen;LI Zhaoyang;LIU Wei;XU Liujie(School of Material Science and Engineering,Henan University of Science and Technology,Luoyang 471023,Henan Province,China;National Joint Collaborative Innovation Center for Nonferrous Metal New Materials and Advanced Processing Technology,Luoyang 471023,Henan Province,China;National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials,Luoyang 471003,Henan Province,China)

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]有色金属新材料及先进加工技术省部共建协同创新中心,河南洛阳471023 [3]金属材料磨损控制与成型技术国家地方联合工程研究中心,河南洛阳471003

出　　处：《电子元件与材料》2022年第1期40-46,103,共8页Electronic Components And Materials

基　　金：国家自然科学基金(U1804124)。

摘　　要：为满足薄膜太阳能电池对Na源充足与稳定的需求,以钼酸钠和氧化钼粉为原料,采用放电等离子烧结技术(SPS)制备了Na掺杂MoO_(3)陶瓷靶材(Na-MoO_(3)),研究了烧结温度、烧结助剂Al和Na掺杂含量(“含量”指摩尔分数)对Na-MoO_(3)靶材结构、组织、致密度以及Na回收率的影响。结果表明:在烧结助剂Al含量为1%、Na含量为3%、烧结温度为450℃的实验条件下,可以制备出致密度高(相对致密度98.2%)、钠回收率高(94.3%)的Na-MoO_(3)陶瓷靶材。随着掺杂含量的增加,Na-MoO_(3)靶材致密度和Na回收率降低。将含1%Al和3%Na的氧化钼陶瓷靶材通过磁控溅射工艺溅射成膜,所制备的Na-MoO_(3)薄膜结构致密,0.28%Na元素均匀弥散分布于薄膜中。In order to meet the requirements of the sufficient and stable Na source for thin film solar cells,Na ion doped MoO_(3)ceramic targets(Na-MoO_(3))were prepared by spark plasma sintering(SPS)using sodium molybdate and molybdenum oxide powder as the raw materials.The effects of the sintering temperature,sintering agent Al and the content of the doped Na(mole fraction)on the structure,microstructure,density and Na recovery of Na-MoO_(3)target were investigated.The results show that under the condition of 1%Al,3%Na and 450℃sintering temperature,the Na-MoO_(3)ceramic target with the high density(relative density of 98.2%)and high sodium recovery(94.3%)can be successfully prepared.With the increase of doping content,the density and Na recovery of Na-MoO_(3)target decreases.Using MoO_(3)ceramic containing 3%Na as the sputtering target,the Na-MoO_(3)thin films were prepared by magnetron sputtering process.The prepared Na-MoO_(3)thin film has a compact structure and 0.28%Na is uniformly distributed in the film.

关 键 词：放电等离子烧结 Na掺杂 MoO_(3)陶瓷靶材 磁控溅射 Na离子源 

分 类 号：TN304.2[电子电信—物理电子学]