A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode  

作　　者：Jing Yang Degang Zhao Zongshun Liu Feng Liang Ping Chen Lihong Duan Hai Wang Yongsheng Shi 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2022年第1期15-17,共3页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62034008,6207414262074140,61974162,61904172,61874175);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115);Beijing Nova Program(Grant No202093);Beijing Municipal Science and Technology Project(Grant No.Z211100007921022);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No XDB43030101)。

摘　　要：Ultraviolet(UV)and deep-UV light emitters are prom-ising for various applications including bioagent detection,wa-ter and air purification,dermatology,high-density optical stor-age,and lithography.However,to achieve shorter UV laser di-odes(LDs),especially for the LDs with lasing wavelength less than 360 nm,requires high AlN mole fraction AlGaN clad-ding layer(CL)and waveguide(WG)layers,which usually leads to generate cracks in AlGaN epilayer due to lack of lat-tice-matched substrates.Meanwhile,due to high resistivity of high AlN mole fraction Mg doped AlGaN layers,only few groups have reported GaN-based LDs with emission wavelength shorter than 360 nm[1−8],and up to now,there is no room temperature continuous-wave(CW)operation UV LDs with a lasing wavelength shorter than 360 nm ever repor-ted.Previously,we have reported a UV LD with lasing wavelength of 366 nm[9].In this paper,a higher AlN mole frac-tion of AlGaN WG layers is employed to shorten the LD emis-sion wavelength to less than 360 nm.A lasing wavelength of 357.9 nm is achieved.

关 键 词：ALGAN LASER WAVEGUIDE 

分 类 号：TN23[电子电信—物理电子学] TN312