High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD  

作　　者：Xiujun Hao Yan Teng He Zhu Jiafeng Liu Hong Zhu Yunlong Huai Meng Li Baile Chen Yong Huang Hui Yang 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,CAS,Suzhou 215123,China [2]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [3]School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China

出　　处：《Journal of Semiconductors》2022年第1期49-52,共4页半导体学报（英文版）

基　　金：supported partly by the Natural Science Foundation of China with Grant No.61874179,No.61804161,No.61975121 and No.61605236;partly by the National Key Research and Development Program of China(No.2019YFB2203400)。

摘　　要：We demonstrate a high-operating-temperature(HOT)mid-wavelength InAs/GaSb superlattice heterojunction in-frared photodetector grown by metal-organic chemical vapor deposition.High crystalline quality and the near-zero lattice mis-match of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction.At a bias voltage of-0.1 V and an operating temperature of 200 K,the device exhibited a 50%cutoff wavelength of~4.9μm,a dark current dens-ity of 0.012 A/cm^(2),and a peak specific detectivity of 2.3×10^(9) cm·Hz^(1/2)/W.

关 键 词：HOT MWIR InAs/GaSb superlattice aluminum-free MOCVD 

分 类 号：TN15[电子电信—物理电子学]