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作 者:Quan Pan Xiongshi Luo
出 处:《Journal of Semiconductors》2022年第1期53-58,共6页半导体学报(英文版)
基 金:supported in part by the National NaturalScience Foundation of China under Grant 62074074;in part by Natural Science Foundation of Guangdong Province under Grant 2021A1515011266;in part by the Science and Technology Plan of Shenzhen under Grants JCYJ20190809142017428 and JCYJ20200109141225025。
摘 要:This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip inductive peak-ing and negative capacitance compensation,are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device,achieving an overall bandwidth enhancement ratio of 8.5.The electrical measure-ment shows TIA achieves 58 dBΩup to 12.7 GHz with a 180-fF off-chip photodetector.The optical measurement demonstrates a clear open eye of 20 Gb/s.The TIA dissipates 4 mW from a 1.2-V supply voltage.
关 键 词:bandwidth enhancement CMOS optical receiver CASCODE inductive peaking negative capacitance transimpedance amplifier(TIA)
分 类 号:TN722[电子电信—电路与系统]
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