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CASCODE: 作品数：51被引量：61H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：陈大正郝跃张春福张进成赵胜雷更多>>; 相关机构：西安电子科技大学东南大学电子科技大学中国航天北京微电子技术研究所更多>>; 相关期刊：《电工技术学报》《CSEE Journal of Power and Energy Systems》《微电子学与计算机》《现代电子技术》更多>>; 相关基金：国家自然科学基金北京市自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>

Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT: 《Science China(Information Sciences)》2025年第1期376-382,共7页Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG; National Natural Science Foundation of China(Grant No.62334003);Guangdong Basic and Applied Basic Research Foundation(Grant No.2020A1515110567).; In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS)cascode anode GaN lateral field-effect diode(CA-LFED)to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN ...; 关键词：Schottky-MIS cascode anode lateral field-effect diode(LFED) ultralow reverse leakage current(ILEAK) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

一款基于SiGe工艺的宽带射频驱动放大器: 《现代电子技术》2025年第2期14-20,共7页张斌蒋颖丹权帅超汪柏康孙莎莎秦战明孙文俊; 为了降低温漂效应对放大器的影响,通过理论分析,设计了一款集成有温度补偿直流偏置网络的宽带射频驱动放大器。为了提高增益和输出功率,电路采用两级差分共射-共基极(cascode)结构,输出端口集成了一款结构新颖的差分转单端Marchand巴伦...; 关键词：驱动放大器宽带射频 SIGE工艺温度补偿共射-共基极(cascode)结构 Marchand巴伦异质结双极晶体管

Switching Behavior of Cascode GaN Under Influence of Gate Driver: 《CSEE Journal of Power and Energy Systems》2024年第4期1816-1833,共18页Bin Luo Guangzhao Luo Sihai Li; supported in part by the National Natural Science Foundation of China(51707161).; With high-frequency,low power dissipation and high-efficiency characteristics,Gallium nitride(GaN)power devices are of significant benefit in designing high-speed motor drives,as they improve performance and reduce we...; 关键词：Gallium nitride(GaN) gate driver oscillation and overshoot switching characteristics

Study on irradiation effect and damage mechanism in cascode GaN HEMT irradiated by 10 MeV electron: 《Space Solar Power and Wireless Transmission》2024年第1期61-68,共8页Hongxia Li Yuxin Lu Rongxing Cao Xuelin Yang Xin Huang Yucai Wang Xianghua Zeng Yuxiong Xue; supported by the Grant of National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment,China(WDZC-HGD-2022-11);State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,China,and the Postgraduate Research and Practice Innovation Program of Jiangsu Province,China(No.SJCX23_1930);National Natural Science Foundation of China(NSFC)Youth Project“Study on the Generation and Evolutionary behavior of Proton Irradiation Defects in temperature-dependent CsPbBr3 quantum Dots”(Project No.:12305310).; This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 8...; 关键词：Electron irradiation Total dose effect Cascode GaN HEMT High temperature annealing Electrical properties

Collaborative gain and noise optimization:a design of 150-173-GHz cascode LNA with 22.3 dB gain and 6.92 dB NF based on the gain-noise plane: 《Science China(Information Sciences)》2023年第10期323-324,共2页Zhongchen XU Menghu NI Qian XIE Zheng WANG; supported by National Natural Science Foundation of China(Grant Nos.62034002,61874022)。; Owing to wideband spectrum resources,sub-terahertz technologies have significant value in high-data-rate wireless communication applications and other fields[1].The evolving transceiver places a high demand on low-noi...; 关键词：CASCODE noise wireless

1.8VCascode电流基准源设计与仿真被引量：1: 《电子制作》2022年第13期75-78,共4页康赟鑫苑芳徐翎张晓晓陈明玉雷嘉懿孙成帅吴庆宇林忠海; 针对传统基准电流源因沟道长度调制效应导致的支路电流不一致的问题,本文从电路分析原理出发,设计了一个Cascode结构的高阻抗电流基准源,详细分析了基准电路内部存在的反馈方式,Cascode电路以及自启动电路的工作原理,对支路电流进行了...; 关键词：CASCODE 电流基准沟道长度调制效应高输出阻抗仿真

A 58-dBΩ20-Gb/s inverter-based cascode transimpedance amplifier for optical communications被引量：3: 《Journal of Semiconductors》2022年第1期53-58,共6页Quan Pan Xiongshi Luo; supported in part by the National NaturalScience Foundation of China under Grant 62074074;in part by Natural Science Foundation of Guangdong Province under Grant 2021A1515011266;in part by the Science and Technology Plan of Shenzhen under Grants JCYJ20190809142017428 and JCYJ20200109141225025。; This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process.Multiple bandwidth enhancement techniques,including input bonding wire,input series on-chip i...; 关键词：bandwidth enhancement CMOS optical receiver CASCODE inductive peaking negative capacitance transimpedance amplifier(TIA)

Cascode GaN高电子迁移率晶体管高频驱动电路及损耗分析被引量：3: 《电工技术学报》2021年第20期4194-4203,共10页岳改丽向付伟李忠; 国家自然科学基金资助项目(51777167)。; 为了减小氮化镓驱动电路高频工作时的损耗,针对共栅共源氮化镓高电子迁移率晶体管(Cascode GaN HEMT)提出一种高频谐振驱动电路,采用储能元件替代传统驱动电路中的耗能元件,电感电流为GaN器件栅极电容充/放电,有源密勒钳位电路抑制桥臂...; 关键词：Cascode GaN高电子迁移率晶体管高频谐振驱动电路串扰抑制低损耗

Experimental Evaluation of Medium-Voltage Cascode Gallium Nitride(GaN)Devices for Bidirectional DC-DC Converters被引量：1: 《CES Transactions on Electrical Machines and Systems》2021年第3期232-248,共17页Salah S.Alharbi Mohammad Matin; Wide bandgap(WBG)semiconductors,such as silicon carbide(SiC)and gallium nitride(GaN),exhibit superior physical properties and demonstrate great potential for replacing conventional silicon(Si)semiconductors with WBG t...; 关键词：Bidirectional dc-dc converters cascode GaN-FETs double-pulse test energy efficiency power loss analysis SiC-MOSFET SiC-Schottky diode switching characterization

一种基于Cascode GaN E-HEMT的单相逆变电路: 《微电子学》2020年第6期828-834,共7页李昊桐陈雷雷李金晓顾晓峰; 国家自然科学基金资助项目(61504050);江苏省研究生科研与实践创新计划资助项目(KYCX18_1855);中央高校基本科研业务费专项资金资助项目(JUSRP51510)。; 首先测试了Cascode结构的氮化镓增强型高电子迁移率晶体管(GaN E-HEMT)的输出、转移特性曲线,分析了导通电阻、输入电容等影响开关特性的电参数。接着分析了单相逆变电路结构,研究表明,采用GaN E-HEMT可极大地减小单相逆变电路的输出滤...; 关键词：GaN E-HEMT 共源共栅单相逆变电路功率损耗转换效率

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