失配状态对GaN HEMT器件性能影响的研究  

Study on the Influence of GaN HEMT Device Performance in Mismatch Condition

作　　者：邵国键 陈正廉 林罡[1] 张茗川 王云燕[1] 刘柱 陈韬[1] SHAO Guojian;CHEN Zhenglian;LIN Gang;ZHANG Mingchuan;WANG Yunyan;LIU Zhu;CHEN Tao(Nanjing Electronic Devices Institute,Nanjingy 210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2021年第6期470-473,共4页Research & Progress of SSE

摘　　要：失配状态会使GaN HEMT器件的输出功率、效率等偏离设计的额定值,通过EMMI和红外测试系统验证了失配状态对GaN HEMT器件性能的影响。结果表明,EMMI发光强度和器件的最高结温与器件输出功率的变化趋势相反,输出功率越大,EMMI发光强度越弱,器件的最高结温越小。进一步测试器件内部左、中、右三个位置的最高结温分布,器件不同位置的最高结温分布受匹配状态、相位、输出功率等影响较大。在不同占空比工作条件下,器件内部不同位置的最高结温分布各不相同,且温升差异更大。Mismatch condition can make the output power and efficiency of GaN HEMT devices deviate from the design values.In this paper,the influence of device performances of GaN HEMT in mismatch condition is verified by the EMMI and infrared test systems.The results show that the change trends of luminous intensity and maximum junction temperature are opposite to the device output power.The higher the output power is,the weaker the luminous intensity is and the smaller the maximum junction temperature is.In addition,the maximum junction temperature distributions at three positions(left,center,right)inside the device are measured.The maximum junction temperature distributions at different positions are greatly affected by the matching condition,phase and output power.In the condition of different duty ratios,the distributions of maximum junction temperature in different positions inside the device are different,and the difference of temperature rise is more obvious.

关 键 词：氮化镓高电子迁移率晶体管 失配 微光显微镜 红外测试 电致发光 最高结温分布 温升 

分 类 号：TN386[电子电信—物理电子学]