JTE终端结构4H-SiC JBS二极管的击穿特性研究  

Study on Breakdown Characteristics of 4H-SiC JBS with JTE Termination

作　　者：姜玉德 周慧芳 赵琳娜 甘新慧 顾晓峰 计建新 JIANG Yude;ZHOU Huifang;ZHAO Linna;GAN Xinhui;GU Xiaofeng;JI Jianxin(Engineer.Res.Center of IoT Technol.Appl.(Ministry of Education),Department of Elec.Engineer.,Jiangnan Univ.,Wuxi,Jiangsu 214122,P.R.China;China Resources Microelectronics Limited,Wuxi,Jiangsu 214061,P.R.China)

机构地区：[1]江南大学电子工程系物联网技术应用教育部工程研究中心,江苏无锡214122 [2]华润微电子有限公司,江苏无锡214061

出　　处：《微电子学》2021年第6期918-922,共5页Microelectronics

基　　金：中央高校基本科研业务费专项资金资助项目(JUSRP51510)。

摘　　要：研究了JTE终端结构4H-SiC JBS二极管的击穿特性。首先,理论模拟了JTE终端横向长度、离子注入剂量和界面电荷对击穿电压的影响。对工艺条件进行优化,制作了JTE终端结构4H-SiC JBS二极管。测试结果表明,器件的正向电压为1.52 V,特征导通电阻为2.12 mΩ·cm^(2),击穿电压为1 650 V。接着,研究器件的变温电流-电压特性发现,正向电流主要为热发射机制,而反向电流与电压、温度有很强的依赖关系。最后进行了高温反偏应力老化测试,结果表明,击穿电压呈下降趋势。The breakdown characteristics of 4 H-SiC JBS diodes with a JTE termination was studied. First, the impacts of the ion implantation dose, lateral length and interface charge of the JTE terminal on the breakdown voltage were analyzed by simulation. The experimental samples were fabricated based on the optimized process parameters. The measurement results showed that the forward threshold voltage was 1.52 V, the specific on-resistance was 2.12 mΩ·cm^(2), and the breakdown voltage was 1 650 V. The forward current was mainly thermal emission mechanism, while the reverse current had strong voltage and temperature dependence. Finally, the high temperature reverse deviational stress aging test was carried out, and the results showed that the breakdown voltage showed a downtrend.

关 键 词：SiC结势垒肖特基二极管 JTE终端结构 击穿电压 高温反偏 

分 类 号：TN386[电子电信—物理电子学]