Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles  

作　　者：Chandreswar Mahata Hassan Algadi Muhammad Ismail Daewoong Kwon Sungjun Kim 

机构地区：[1]Division of Electronics and Electrical Engineering,Dongguk University,Seoul 04620,Republic of Korea [2]Department of Electrical Engineering,Faculty of Engineering,Najran University,P.O.Box 1988,Najran 11001,Saudi Arabia [3]Department of Electrical Engineering,Inha University,Incheon,Republic of Korea

出　　处：《Journal of Materials Science & Technology》2021年第36期203-212,共10页材料科学技术（英文版）

基　　金：financially supported in part by National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIP)(2018R1C1B5046454);by the Dongguk University Research Fund of 2020。

摘　　要：Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles(TaN-NPs)and sandwiched between Al-doped HfO;layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM device.Transmission electron microscopy along with energy dispersive spectroscopy confirms the presence of TaN-NPs.X-ray photoelectron spectroscopy suggests that part of Ta N converted to tantalum oxynitride(TaO_(x)N_(y))which plays an important role in stable cycle-to-cycle resistive switching.Charge trapping and oxygen vacancy creation were found to be modified after the inclusion of Ta N-NPs inside RRAM structure.Also,HfAlO/TaO_(x)N_(y)interface due to the presence TaN-NPs improves the device-to-device switching reliability by reducing the probability of random rupture/formation of conductive filaments(CFs).DC endurance of more than 10^(3)cycles and memory data retention up to 10^(4)s was achieved with an insignificant variation of different resistance states.Multilevel conductance was attained by controlling RESET voltage with stable data retention in multiple states.The volatile threshold switching was monitored after controlling the CF forming at 200 nA current compliance with high selectivity of~10^(3).Synaptic learning behavior has been demonstrated by spike-rate-dependent plasticity(SRDP).Reliable potentiation and depression processes were observed after the application of suitable negative and positive pulses which shows the capability of the TaN–NPs based RRAM device for transparent synaptic devices.

关 键 词：RRAM ALD TaN-nanoparticles Threshold switching Spike-rate-dependent plasticity Multilevel conductance Synaptic properties 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN60[电子电信—电路与系统]