非易失性静态随机存储器研究进展  

Research Development of Non-Volatile Static Random Access Memory

作　　者：冯平 尹家宇 宋长坤 余仕湖 李伯阳 陈铖颖 左石凯 Feng Ping;Yin Jiayu;Song Changkun;Yu Shihu;Li Boyang;Chen Chengying;Zuo Shikai(School of Opto-Electronic and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China;Xiamen Newsound Technology Co.,Ltd.,Xiamen 361115,China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024 [2]厦门新声科技有限公司,福建厦门361115

出　　处：《半导体技术》2022年第1期1-8,18,共9页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61704143);福建省自然科学基金面上项目(2020J01295);厦门市2020年青年创新基金资助项目(3502Z20206074)。

摘　　要：在非易失性存储器领域,非易失性静态随机存储器(NVSRAM)可以克服现有非易失性存储器的缺点与限制,并完全替代静态随机存储器(SRAM)。首先,对几种新型非易失性存储器进行了简单阐述;其次介绍了NVSRAM的基本工作原理和特点,针对NVSRAM在解决传统SRAM掉电数据储存问题、加快读取速度以及减少功耗等方面的优势进行阐述。对近年来基于阻变存储器的NVSRAM的研究背景和国内外研究现状进行了调研,着重比较和分析了已有结构的优缺点,重点探讨了提高恢复率、减少漏电流和降低功耗的关键优化技术。最后,展望了NVSRAM未来的应用和研究发展方向。In the field of non-volatile memory,non-volatile static random access memories(NVSRAMs)can overcome the shortcomings and limitations of existing non-volatile memories,and completely replace static random access memories(SRAMs).Firstly,several new non-volatile memories are briefly described.Secondly,the basic working principle and features of NVSRAMs are introduced.The advantages of NVSRAMs in solving the problem of power-off data storage of conventional SRAMs,accelerating reading speed and reducing power consumption are described.The research background and current status of NVSRAMs based on resistive memory at home and abroad in recent years are investigated.The advantages and disadvantages of existing structures are also compared and analyzed,and the key optimization technologies to improve restore yield,reduce leakage current and reduce power consumption are focused on.Finally,the future applications and research development directions of NVSRAMs are prospected.

关 键 词：非易失性 静态随机存储器(SRAM) 恢复率 漏电流 功耗 

分 类 号：TN43[电子电信—微电子学与固体电子学]