一种在深硅刻蚀工艺中减小底部圆角的方法  

A Method of Footing Reduction in Deep Silicon Etching Process

作　　者：林源为 赵晋荣 Lin Yuanwei;Zhao Jinrong(Beijing NAURA Microelectronics Equipment Co.,Ltd.,Beijing 100176,China)

机构地区：[1]北京北方华创微电子装备有限公司,北京100176

出　　处：《半导体技术》2022年第1期42-45,64,共5页Semiconductor Technology

摘　　要：由于存在化学刻蚀的各向同性作用,不可避免地会在等离子体深硅刻蚀工艺中出现底部圆角,而过大的底部圆角给许多工艺应用带来不利影响。为了减小在等离子体深硅刻蚀中的底部圆角,对埋入式扇出型封装中的硅微腔刻蚀和2.5D封装中的硅通孔(TSV)刻蚀进行了研究。通过在BOSCH工艺中引入偏置电极功率递增和单步沉积时间递增的组合,硅微腔和TSV中的底部圆角高度分别从13.6μm和12μm减小到了6.6~10.0μm和8.4μm。该方法有望实际应用于微电子机械系统(MEMS)器件的制造和电子器件的先进封装等领域。Due to the existence of isotropic effect of chemical etching,the footing is ineviable in plasma deep silicon etching process,and the oversized footing may bring negative influences on variety of process applications.In order to reduce the footing in plasma deep silicon etching,the silicon micro-cavity etching in buried fan-out packaging and through silicon via(TSV)etching in 2.5 D packaging were studied.By introducing the combination of the ramping of bias electrode power and deposition time per step in BOSCH process,the footing heights in silicon microcavity and TSV were reduced from 13.6μm and 12μm to 6.6-10.0μm and 8.4μm,respectively.This method is expected to be practically applied in the fields such as the manufacturing of micro-electromechanical system(MEMS)devices and advanced packaging of electronic devices.

关 键 词：深硅刻蚀 减小底部圆角 硅微腔 硅通孔(TSV) 先进封装 

分 类 号：TN305.7[电子电信—物理电子学] TN304.12