溅射气压对氧化镓薄膜光学特性的影响  

Effect of Sputtering Pressure on Optical Properties of Ga_(2)O_(3)Films Prepared by RF Magnetron Sputtering

作　　者：张芮馨 孙辉 程佳 刘子童 陈建金 沈龙海[1] ZHANG Ruixin;SUN Hui;CHENG Jia;LIU Zitong;CHEN Jianjin;SHEN Longhai(School of Science,Shenyang Ligong University,Shenyang 110159,CHN)

机构地区：[1]沈阳理工大学理学院,沈阳110159

出　　处：《半导体光电》2021年第6期875-878,共4页Semiconductor Optoelectronics

基　　金：辽宁省教育厅自然科学基金项目(LG201910)。

摘　　要：采用射频磁控溅射法在石英衬底上制备了氧化镓(Ga_(2)O_(3))薄膜。利用X射线衍射仪和紫外-可见-红外分光光度计分别对Ga_(2)O_(3)薄膜的晶体结构和光学带隙进行了表征,并在室温下测量了Ga_(2)O_(3)薄膜的光致发光(PL)谱。结果表明:制备的Ga_(2)O_(3)薄膜呈非晶态。吸收边随着溅射气压的增加先蓝移后红移,光学带隙值范围为5.06~5.37 eV,溅射气压为1 Pa时,制备的Ga_(2)O_(3)薄膜具有最大的光学带隙。在325 nm激光激发下,400 nm附近和525 nm附近处出现与缺陷能级相关的发光峰。Ga_(2)O_(3)thin films were grown on quartz substrate by radio-frequency magnetron sputtering. The structure and optical bandgap of Ga_(2)O_(3)films were characterized by X-ray diffraction and UV-Vis-IR spectroscopy, respectively. The photoluminescence(PL) spectra of Ga_(2)O_(3)films were measured at room temperature. The results show that the deposited Ga_(2)O_(3)films are amorphous. As the pressure increases, the optical absorption edge firstly shows blue shift and then switches to red shift. The optical bandgap value ranges from 4.96 to 5.30 eV. When the sputtering pressure is 1 Pa, the deposited Ga_(2)O_(3)film has the largest optical band gap. Under the excitation of 325 nm laser, luminescence peaks related to defect energy levels appear near 400 and 525 nm.

关 键 词：Ga_(2)O_(3)薄膜 射频磁控溅射 晶体结构 光学带隙 光致发光 

分 类 号：O471.4[理学—半导体物理]