金属氧化物半导体气体传感器改性研究进展  

Research progress in properties modification of metal oxide semiconductor gas sensors

作　　者：璩光明 杨莹丽[2] 王国东 杨林林 QU Guangming;YANG Yingli;WANG Guodong;YANG Linlin(School of Electrical Engineering and Automation,Henan Polytechnic University,Jiaozuo 454003,China;Instrumental Analysis Center,Henan Polytechnic University,Jiaozuo 454003,China;School of Physics and Electronic Information Engineering,Henan Polytechnic University,Jiaozuo 454003,China)

机构地区：[1]河南理工大学电气工程与自动化学院,河南焦作454003 [2]河南理工大学分析测试中心,河南焦作454003 [3]河南理工大学物理与电子信息学院,河南焦作454003

出　　处：《传感器与微系统》2022年第2期1-4,共4页Transducer and Microsystem Technologies

基　　金：河南省国际合作项目(13180060)。

摘　　要：金属氧化物半导体气体传感器在环境空气质量监测、有毒有害气体检测以及某些疾病初步诊断等方面具有良好的应用价值与潜力。综述了近些年针对提升金属氧化物半导体气体传感器性能的改性研究进展,从对本体材料掺杂、修饰以及复合等多方面探讨改性措施对金属氧化物半导体气体传感器性能的改善提升作用,并展望了金属氧化物半导体气体传感器未来的发展方向。Metal oxide semiconductor gas sensors have the value and potential in ambient air quality monitoring,detecting poisonous and harmful gas and diagnosing specific disease.The recent progress in improving the gas sensitive properties of metal oxide semiconductor gas sensors is reviewed,and the effects of modification measures on the gas sensitive properties of metal oxide semiconductor gas sensors are discussed from the perspectives of doping,decoration and composite.Finally,the future development trends of metal oxide semiconductor gas sensors are prospected.

关 键 词：金属氧化物半导体 气体传感器 掺杂 修饰 复合 性能提升 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]