Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices  

作　　者：Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang 徐忍忍;张青竹;周龙达;杨红;盖天洋;殷华湘;王文武(Integrated Circuit Advanced Process Center(ICAC),Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Integrated Circuit Advanced Process Center(ICAC),Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第1期529-534,共6页中国物理B（英文版）

基　　金：the Science and Technology Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z201100004220001);the National Major Project of Science and Technology of China(Grant No.2017ZX02315001);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(Grant Nos.Y9YS05X002 and E0YS01X001).

摘　　要：A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.Moreover,the channel length dependence on NBTI is more serious than that on PBTI.Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is proposed.Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs.The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关 键 词：bias temperature instability(BTI) channel length stress FINFET 

分 类 号：TN386[电子电信—物理电子学]