Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties  

作　　者：Zhen-Hua Li Peng-Fei Shao Gen-Jun Shi Yao-Zheng Wu Zheng-Peng Wang Si-Qi Li Dong-Qi Zhang Tao Tao Qing-Jun Xu Zi-Li Xie Jian-Dong Ye Dun-Jun Chen Bin Liu Ke Wang You-Dou Zheng Rong Zhang 李振华;邵鹏飞;施根俊;吴耀政;汪正鹏;李思琦;张东祺;陶涛;徐庆君;谢自力;叶建东;陈敦军;刘斌;王科;郑有炓;张荣(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing,China;College of Optoelectronics Engineering,Zaozhuang University,Zaozhuang 277160,China;Institute of Novel Semiconductors,State Key Laboratory of Crystal Material,Shandong University,Jinan 250100,China;Xiamen University,Xiamen 361005,China)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing,China [2]College of Optoelectronics Engineering,Zaozhuang University,Zaozhuang 277160,China [3]Institute of Novel Semiconductors,State Key Laboratory of Crystal Material,Shandong University,Jinan 250100,China [4]Xiamen University,Xiamen 361005,China

出　　处：《Chinese Physics B》2022年第1期618-625,共8页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.62074077,61921005,61974062,and 61974065);the Fundamental Research Funds for the Central Universities,China(Grant No.14380166);Key R&D Program of Jiangsu Province,China(Grant No.BE2020004-3);the National Key R&D Program of China(Grant No.2017YFB0404101);Nature Science Foundation of Jiangsu Province,China(Grant No.BE2015111);Collaborative Innovation Center of Solid State Lighting and Energysaving Electronics.

摘　　要：A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.

关 键 词：GAN molecular beam epitaxy(MBE) low growth rate growth diagram 

分 类 号：TN386[电子电信—物理电子学]