PLD法制备ITO导电薄膜及其性能  

Preparation and Property of ITO Conductive Film by Pulsed Laser Deposition Method

作　　者：姚雪 谭秋林[1,2] Yao Xue;Tan Qiulin(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan 030051,China;Shanxi Micron Nano Engineering Technology Research Center,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学省部共建动态测试技术国家重点实验室,太原030051 [2]中北大学山西省微米纳米工程技术研究中心,太原030051

出　　处：《微纳电子技术》2022年第2期180-186,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(U1837209,51875534);国家重点研发计划资助项目(2018YFB2003103)。

摘　　要：为了研制可用于高温环境下进行应变测量的应变层,采用脉冲激光沉积(PLD)法在陶瓷基底上制备了氧化铟锡(ITO)薄膜。研究了PLD法中不同基底温度对ITO薄膜显微结构、电学性能以及阻温特性的影响。采用X射线衍射仪(XRD)测试了薄膜的晶体结构,通过四点探针测量法测得薄膜的薄层电阻,采用场发射扫描电子显微镜(FESEM)对薄膜进行表面形貌分析。结果发现制备的ITO薄膜呈现出体心立方(BCC)结构,且沿(222)晶面优先生长,薄膜的晶粒尺寸随着基底温度的升高而增加,ITO薄膜的电学性能受基底温度的影响显著,电阻率随着衬底温度的升高而降低。最后,搭建测试平台在25~1050℃内测试了不同基底温度下制备的ITO薄膜的电阻温度系数(TCR)。结果表明,ITO薄膜的电阻温度系数随基底温度的升高而降低,在基底温度为600℃下制备的ITO薄膜具有最小的TCR值,为-259.575×10^(-6)℃^(-1)。To develop the strain layer for the strain measurement in high-temperature environment,the indium tin oxide(ITO)film was prepared on a ceramic substrate with pulsed laser deposition(PLD)method.Effects of different substrate temperatures in the PLD method on the microstructure,electrical properties and temperature resistance characteristics of the ITO film were studied.The X-ray diffractometer(XRD)was used to test the crystal structure of the films.The sheet resistance of the films was measured by the four-point probe measurement method.The surface morphology of the films was analyzed by the field emission scanning electron microscope(FESEM).The results show that the prepared ITO film exhibits a body-centered cubic(BCC)structure and preferentially grows along the(222)crystal plane.The grain size of the film increases with the increase of the substrate temperature.The electrical properties of the ITO film are significantly affected by the substrate temperature,and the resistivity decreases with the increase of the substrate temperature.Finally,a test platform was built to test the temperature coefficient of resistance(TCR)of the ITO films prepared at different substrate temperatures in the range of 25-1050℃.The results show that TCR of the ITO films decreases with the increase of the substrate temperature,and the ITO film prepared at 600℃substrate temperature has the smallest TCR value,i.e.-259.575×10^(-6)℃^(-1).

关 键 词：脉冲激光沉积(PLD) 基底温度 氧化铟锡(ITO)薄膜 应变测量 电阻温度系数(TCR) 

分 类 号：TB34[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]