High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications  

作　　者：Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou Jielong Liu Sijia Liu Ling Yang Bin Hou Xiaohua Ma Yue Hao 王鹏飞;宓珉瀚;张濛;祝杰杰;周雨威;刘捷龙;刘思佳;杨凌;侯斌;马晓华;郝跃(Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China;School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China;Xidian University Guangzhou Institute of Technology,Guangzhou 510555,China)

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China [2]School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China [3]Xidian University Guangzhou Institute of Technology,Guangzhou 510555,China

出　　处：《Chinese Physics B》2022年第2期547-551,共5页中国物理B（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Research and Development Plan of Key Fields in Guangzhou(Grant No.202103020002)。

摘　　要：We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in DVC-HEMT.The fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d Bm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

关 键 词：ALGAN/GAN LINEARITY 1-dB compression point millimeter-wave application 

分 类 号：TN386[电子电信—物理电子学]