A 4H-SiC merged P–I–N Schottky with floating back-to-back diode  

作　　者：Wei-Zhong Chen Hai-Feng Qin Feng Xu Li-Xiang Wang Yi Huang Zheng-Sheng Han 陈伟中;秦海峰;许峰;王礼祥;黄义;韩郑生(College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Department of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]College of Electronics Engineering,Chongqing University of Posts and Telecommunications,Chongqing 400065,China [2]Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China [3]Department of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第2期660-664,共5页中国物理B（英文版）

摘　　要：A novel 4 H-Si C merged P–I–N Schottky(MPS)with floating back-to-back diode(FBD),named FBD-MPS,is proposed and investigated by the Sentaurus technology computer-aided design(TCAD)and analytical model.The FBD features a trench oxide and floating P-shield,which is inserted between the P+/N-(PN)junction and Schottky junction to eliminate the shorted anode effect.The FBD is formed by the N-drift/P-shield/N-drift and it separates the PN and Schottky active region independently.The FBD reduces not only the Vturn to suppress the snapback effect but also the Von at bipolar operation.The results show that the snapback can be completely eliminated,and the maximum electric field(Emax)is shifted from the Schottky junction to the FBD in the breakdown state.

关 键 词：4H-SIC merged P-I-N Schottky(MPS) snapback effect turnover voltage floating back-to-back diode(FBD) 

分 类 号：TN312.4[电子电信—物理电子学] TP391.72[自动化与计算机技术—计算机应用技术] TN304.24[自动化与计算机技术—计算机科学与技术]