反向泄漏电流对GaN基雪崩渡越时间二极管性能的影响  

Effect of Reverse Leakage Current on the Performance of GaN-based Impact Ionization Avalanche Transit Time Diode

作　　者：戴扬 卢昭阳 党江涛 叶青松 雷晓艺 张云尧 廖晨光 赵武[1] DAI Yang;LU Zhao-yang;DANG Jiang-tao;YE Qing-song;LEI Xiao-yi;ZHANG Yun-yao;LIAO Chen-guang;ZHAO Wu(School of Information Science and Technology,Northwest University,Xi’an 710127,China)

机构地区：[1]西北大学信息科学与技术学院,西安710127

出　　处：《现代应用物理》2021年第4期93-99,共7页Modern Applied Physics

基　　金：国家自然科学基金资助项目(61804125,62004163);陕西省教育厅科研计划项目(19JK0846,19JK0856)。

摘　　要：研究了不同反向泄漏电流密度下的GaN基雪崩渡越时间(IMPATT)二极管大信号输出特性。仿真结果表明,IMPATT二极管的交流性能会随着反向泄漏电流密度的增大而显著降低。对IMPATT二极管工作时的内部特性的研究表明,引起IMPATT二极管性能衰减的主要原因是较大的反向泄漏电流并没有降低交流相位延迟,反而使交流周期中内部电场的振幅显著衰减,使交流电压和交流电流显著衰减,降低了雪崩渡越时间二极管大信号输出特性。The large signal output characteristics of GaN-based impact ionization avalanche transit time(IMPATT)diodes with different reverse leakage current densities are studied.The simulation results show that the RF performance of the IMPATT diode decreases with the increase of the reverse leakage current density.The results show that the main reason for the performance of IMPATT diode attenuation is that the large reverse leakage current does not reduce the RF phase delay,but significantly attenuates the amplitude of internal electric field,decrease the RF voltage and current,thus reduces the large signal output characteristics.

关 键 词：反向泄漏电流 相位延迟 电场 IMPATT二极管 

分 类 号：TN312[电子电信—物理电子学]