基于感应电压的大功率IGBT模块结温检测研究  

Research on Junction Temperature Detection of High-power IGBT Module Based on Induced Voltage

作　　者：杨新华[1] 尹玉成 申万增[2] 燕宏斌[2] YANG Xin-hua;YIN Yu-cheng;SHEN Wan-zeng;YAN Hong-bin(Lanzhou University of Technology,Lanzhou 730050,China;不详)

机构地区：[1]兰州理工大学,电气工程与信息工程学院,甘肃兰州730050 [2]中国科学院近代物理研究所,甘肃兰州730000

出　　处：《电力电子技术》2021年第12期16-19,共4页Power Electronics

摘　　要：大功率绝缘栅双极型晶体管(IGBT)模块广泛应用于电力系统、机车牵引和风力发电等众多领域,其健康状态与可靠运行是电力电子系统关注的重点。IGBT结温检测是其可靠性分析与状态检测研究的关键。基于热敏感电参数(TSEP)法,分析了感应电压与结温之间的关系,通过实测建立了感应电压测量结温的三维模型,最后设计和搭建了基于H桥拓扑结构的工况复现平台,研究了大容量IGBT模块在工况下的结温波动特征,使用红外摄像仪进行温度测量对比,验证了所研究检测方法的准确性和实用性。High-power insulated gate bipolar transistor(IGBT) modules are widely used in power systems,locomotive traction and wind power generation and many other fields,its health status and reliable operation is the focus of power electronics systems.The research shows that IGBT junction temperature detection is the key to its reliability analysis and state detection,so how to extract IGBT dynamic junction temperature in real time is the key to its reliability research.Based on the thermally sensitive electrical parameter(TSEP) method,the relationship between induction voltage and junction temperature is analyzed,the three-dimensional model of sensing voltage measurement junction temperature is established by the measured,and finally the condition re-emergence platform based on H-bridge topology is designed and constructed,the temperature fluctuation characteristics of high-capacity IGBT module are studied,and the temperature estimation comparison is performed using infrared camera.The feasibility and practicability of the proposed method are verified.

关 键 词：绝缘栅双极型晶体管 结温 热敏感电参数 

分 类 号：TN32[电子电信—物理电子学]