基于SiC MOSFET的无线充电系统桥臂串扰特性  

Crosstalk Characteristics of SiC MOSFET-based Wireless Charging Systems

作　　者：薄强 王丽芳[1,2,3] 张玉旺 郭彦杰[1,2,3] BO Qiang;WANG Li-fang;ZHANG Yu-wang;GUO Yan-jie(Institute of Electrical Engineering,Chinese Academy of Sciences,Bejing 100190,China)

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院电力电子与电气驱动重点实验室,北京100190 [3]中国科学院大学,北京100049

出　　处：《电力电子技术》2021年第12期87-90,109,共5页Power Electronics

基　　金：国家重点研发计划(2018YFB0106300);中国科学院战略性先导科技专项(XDA22010403)。

摘　　要：应用于无线充电系统的碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)易产生桥臂串扰问题并影响运行可靠性。首先对桥臂串扰的产生机理进行建模并得出SiCMOSFET的结电容在串扰计算中的作用;然后探讨无线充电系统中的桥臂串扰类型,并进一步分析SiCMOSFET结电容的非线性在桥臂串扰电压幅值计算中的影响;最后搭建10kW无线充电系统台架进行实验验证。结果证明,此时的SiCMOSFET不存在正向串扰而仅存在负向串扰,并且考虑结电容的非线性得到的串扰电压计算值可以更加准确地表征实验值。Silicon carbide(SiC) metal-oxide-semiconductor field-effect transistor(MOSFET) used in wireless charging system is prone to produce crosstalk,which will affect the reliability of operation.Firstly,the mechanism of crosstalk is modeled and the role of junction-capacitance in the crosstalk calculation is obtained.Then,the types of crosstalk in wireless charging system are discussed,and the influence of nonlinear junction capacitance of SiC MOSFET on the calculation of crosstalk voltage is further analyzed.Finally,a 10 kW wireless charging system bench is built for experimental verification.The results show that there is no positive crosstalk but only negative crosstalk in the SiC MOSFET,and the calculated value of the crosstalk voltage obtained by considering the nonlinear junction capacitance can more accurately characterize the experimental value.

关 键 词：金属氧化物半导体场效应晶体管 无线充电 桥臂串扰 

分 类 号：TN32[电子电信—物理电子学]