改善SiC MOSFET开关性能的变电压有源驱动电路研究  

RESEARCH ON VARIABLE-VOLTAGE ACTIVE DRIVE CIRCUIT FOR IMPROVING SiC MOSFET SWITCHING PERFORMANCE

作　　者：李先允[1] 卢乙 倪喜军[1] 王书征[1] 张宇[1] 唐昕杰 Li Xianyun;Lu Yi;Ni Xijun;Wang Shuzheng;Zhang Yu;Tang Xinjie(School of Electric Power Engineering,Nanjing Institute of Technology,Nanjing 211167,China)

机构地区：[1]南京工程学院电气工程学院,南京211167

出　　处：《太阳能学报》2022年第1期362-368,共7页Acta Energiae Solaris Sinica

基　　金：江苏省重点研发计划(BE201830)。

摘　　要：碳化硅(silicon carbide,SiC)金属氧化物半导体场效应管(metal oxide semiconductor field effect transistor,MOSFET)开关过程中存在电流、电压过冲和振荡问题,这会产生额外的损耗,甚至造成器件损坏。文章提出一种用于SiC MOSFET的变电压有源驱动电路,能在开通电流上升和关断电流下降阶段改变器件驱动电压,从而抑制器件开关过程中的电流、电压过冲和振荡,实验结果表明,与传统驱动电路相比,所提出的变电压有源驱动电路,能有效抑制器件开关过程中的电流、电压过冲和振荡,最后将其应用于光伏变压器中,验证其实用性。During the switching process of SiC MOSFET,the current and voltage overshoot and oscillation may occur,which can cause additional losses and damage the device.This article proposes a variable voltage active gate driver for SiC MOSFET,which can change the drive voltage of the device during the turn-on current rise and turn-off current decline stages,to suppress the current and voltage overshoot and oscillation.The experimental results show that,compared with the conventional gate driver,the proposed variable-voltage active gate drive circuit can effectively suppress the overshoot and oscillation of current and voltage during the switching process of the device.Finally,the practicability of the proposed active gate driver was verified by applying it to the photovoltaic transformers.

关 键 词：碳化硅金属氧化物半导体场效应管(SiC MOSFET) 有源驱动 过冲 振荡 光伏变压器 

分 类 号：TM46[电气工程—电器]