采用Ga(In,As)P异变缓冲层的GaP/Si衬底上InAs量子阱  

InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers

作　　者：黄卫国 顾溢[1,2,3,4] 金宇航 刘博文 龚谦 黄华[1] 王庶民 马英杰[1,2,3] 张永刚[1,2,3] HUANG Wei-Guo;GU Yi;JIN Yu-Hang;LIU Bo-Wen;GONG Qian;HUANG Hua;WANG Shu-Min;MA Ying-Jie;ZHANG Yong-Gang(Key Laboratory of Terahertz Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Science,Beijing 100049,China;Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg SE-41296,Sweden)

机构地区：[1]中国科学院上海微系统与信息技术研究所太赫兹技术重点实验室,上海200050 [2]中国科学院上海技术物理研究所传感技术联合国家重点实验室,上海200083 [3]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [4]中国科学院大学,北京100049 [5]查尔姆斯理工大学微技术与纳米科学系,哥德堡SE-41296

出　　处：《红外与毫米波学报》2022年第1期253-261,共9页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(Nos.62075229 and 61775228);the International Science and Technology Cooperation Program of Shanghai(No.20520711200)。

摘　　要：本工作在GaP/Si衬底上基于In_(0.83)Al_(0.17)As异变缓冲层实现了InAs/In_(0.83)Al_(0.17)As量子阱的生长。研究了Ga_(x)In_(1-x)P和GaAs_(y)P_(1-y)递变缓冲层对量子阱结构材料性能的影响。采用Ga_(x)In_(1-x)P组分渐变缓冲层的样品X射线衍射倒易空间衍射峰展宽更小,表明样品中的失配位错更少。两个样品均在室温下实现了中红外波段的光致发光,而采用Ga_(x)In_(1-x)P组分渐变缓冲层的样品在不同温度下都具有更高的光致发光强度。这些结果表明在GaP/Si复合衬底上采用阳离子混合的渐变缓冲层对生长中红外InAs量子阱结构具有相对更优的效果。InAs/In_(0.83)Al_(0.17)As quantum wells have been demonstrated on In_(0.83)Al_(0.17)As metamorphic layers on GaP/Si substrates.The effects of Ga_(x)In_(1-x)P and GaAs_(y)P_(1-y) graded buffer layers on the sample performances are investigated.The sample with Ga_(x)In_(1-x)P metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps,indicating less misfit dislocations in the sample.Mid-infrared photoluminescence signals have been observed for both samples at room temperature,while the sample with Ga_(x)In_(1-x)P metamorphic buffer shows stronger photoluminescence intensity at all temperatures.The results indicate the metamorphic buffers with mixed cations show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.

关 键 词：量子阱 GaP/Si 异变缓冲层 中红外 

分 类 号：TN215[电子电信—物理电子学]