不同Al组分的扩散阻挡层对无杂质空位诱导量子阱混杂的影响  

Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing

作　　者：张娜玲 井红旗[1] 袁庆贺 仲莉[1] 刘素平[1] 马骁宇[1,2] Zhang Naling;Jing Hongqi;Yuan Qinghe;Zhong Li;Liu Suping;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《中国激光》2021年第24期40-46,共7页Chinese Journal of Lasers

基　　金：国家重点研发项目(2018YFB1107301);国防科技重点基金(6142405041803)。

摘　　要：为了获得更好的量子阱混杂效果,深入探讨了不同Al组分的扩散阻挡层对无杂质空位诱导量子阱混杂的影响。首先在两种不同Al组分外延片表面上分别生长了一层200nm厚的SiO_(2)介质薄膜,然后在865~905℃温度范围内,进行了90s的高温快速热退火处理。实验结果表明,低铝结构的波长蓝移量更大,且光致发光(Photoluminescence,PL)谱的强度下降更小,这说明在无杂质空位诱导量子阱混杂中,外延结构中的Al和Ga对点缺陷扩散的影响是不同的,Ga更有利于点缺陷的扩散。研究结果为无杂质空位诱导量子阱混杂的理论研究及器件的外延结构设计提供了参考。Objective In recent years,the quantum well mixing technology has been widely used in photonic integrated circuits,optoelectronic integrated circuits,and high-power semiconductor lasers with non-absorbing window structures.As for impurity-free vacancy induced quantum well mixing,due to the fact that there is no introduction of impurities,the process is simple,the cost is low,and the epitaxial wafer can maintain high lattice quality after quantum well mixing.The current literature reports are focused on the theoretical research,the exploration of experimental conditions,and the performance analysis of the related devices,but the reports on the influence of epitaxial structure on impurity-free vacancy induced quantum well mixing are still blank.In this article,the rapid thermal annealing experiment is carried out on the epitaxial wafers with different Al composition concentration waveguide layers and confinement layers,the influence of epitaxial structure on quantum well mixing is discussed,and the experimental results are theoretically analyzed and discussed.The research results provide a reference for the theoretical study of impurity-free vacancy induced quantum well mixing and the design of epitaxial structure of the device.Methods Firstly,the InGaAs/GaAs single quantum well epitaxial wafer is grown using the metal-organic chemical vapor deposition equipment,the sample 1 is a high-aluminum structure,and the sample 2 is a low-aluminum structure,whose detailed epitaxial structures are shown in Figs.1(a)and 1(b),respectively.Second,the 200 nm SiO_(2) dielectric film is grown on the surface of the samples 1 and 2 using the plasma enhanced chemical vapor deposition equipment.Then,the samples 1 and 2 are carried to a rapid thermal annealing treatment under different annealing temperature and time conditions.Finally,the PL spectral test is performed on the samples 1 and 2,and the experimental results are analyzed and discussed focusing on the influence of epitaxial structure on impurity-free vacancy-induced quantum wel

关 键 词：材料 高铝结构 低铝结构 无杂质空位诱导 量子阱混杂 波长蓝移 

分 类 号：TN248.4[电子电信—物理电子学]