大功率低偏振度超辐射发光二极管的研制  

Study of high power low polarization superluminescent diodes

作　　者：李吴皓 王定理 李中坤 单静春 黄晓东 汤宝 LI Wu-hao;WANG Ding-li;LI Zhong-kun;SHAN Jing-chun;HUANG Xiao-dong;TANG Bao(Accelink Technologies Co.,Ltd.,Wuhan 430074,China)

机构地区：[1]武汉光迅科技股份有限公司,湖北武汉430074

出　　处：《激光与红外》2022年第2期217-222,共6页Laser & Infrared

摘　　要：超辐射发光二极管(SLED)是一种非相干性光源,具有激光器功率大,耦合效能高的优点,同时也有着频谱宽、相干长度短等特点,可以应于光学相干层析技术和波分复用技术等领域。未来的发展方向是更大的功率,更大的带宽以及更低的消光比。本论文研究了1310 nm波段具有掩埋异质结构的高性能SLED芯片的设计与波导工艺制作,采取7°倾斜波导并镀上反射率小于0.1%的增透膜。经测试该SLED芯片具有大的饱和出光功率(超过20 mW),低的偏振消光比(低于0.5 dB),以及良好的光谱特性(3 dB光谱带宽大于50 nm,光谱纹波小于0.1 dB)。Superluminescent diode(SLED)is an incoherent light source,which has the advantages of high laser power,high coupling efficiency,wide spectrum and short coherence length.It can be applied in optical coherence tomography technology,wavelength division multiplexing technology and other fields.The future development direction is greater power,greater bandwidth and lower extinction ratio.In this paper,the design of high-performance SLED chips with buried heterostructures in the 1310 nm band and the fabrication of waveguides are proposed.The waveguide is inclined at 7°.The front and back facets are coated with anti-reflection film with a reflectivity of less than 0.1%.It is concluded that the fabricated SLED chip has a large saturated output power(more than 20 mW),a low polarization extinction ratio(less than 0.5 dB),and good spectral characteristics(3 dB spectral bandwidth is greater than 50 nm;spectral ripple is less than 0.1 dB).

关 键 词：超辐射发光二极管 掩埋异质结 大功率 低偏振消光比 宽光谱 

分 类 号：TN365[电子电信—物理电子学]