抗PID多晶硅电池的磷扩散工艺改进  

Improvement of Phosphorus Diffusion Process for Anti-PID Polycrystalline Silicon Cells

作　　者：黄爽鑫 肖慧萍[1] 曹家庆 李文博 HUANG Shuangxin;XIAO Huiping;CAO Jiaqing;LI Wenbo(School of Materials and Engineering,Nanchang Hangkong University,Jiangxi Nanchang,330063,China;Office of Educational Administration,Nanchang Hangkong University,Jiangxi Nanchang,330063,China)

机构地区：[1]南昌航空大学材料科学与工程学院,江西南昌330063 [2]南昌航空大学教务处,江西南昌330063

出　　处：《江西化工》2022年第1期1-5,共5页Jiangxi Chemical Industry

基　　金：国家自然科学基金(项目编号:51862025);江西省自然科学基金(项目编号:20192BAB206012);江西省教改课题(项目编号:JXJG-19-8-1);南昌航空大学教改课题(项目编号:JY2064);南昌航空大学材料科学与工程学院一流课程建设经费资助

摘　　要：电池组件在高电势差的影响下易发生电势诱导衰减(PID)。开发一种三次通源磷扩散工艺,可在较低方阻(70Ω~75Ω)下获得高效率。可通过调节温度、时间、扩散气体的流量等来获得预期的电池方阻。三次通源扩散工艺的最佳工艺参数为:扩散中心温度为830℃、氧气流量为1700 sccm、扩散氮的流量为2300 sccm、通源时间和再分布时间分别为250 s和700 s。该法制备的电池所形成的组件在(85℃+85%RH+负1000V+96H)条件下峰值功率衰减了0.62%,满足峰值功率变化小于5%的抗PID要求。The potential induced dedradation(PID)phenomenum will happen under the influence of high potential difference.By exploring a new method of diffusing phosphorus three times,high efficiency at lower sheet square resistances(70Ω~75Ω)can be obtained.The predicted square resistances can be achieved by changing the temperature,time and the diffusion gas flow.The best process parameters are diffusion center temperature of 830℃,O 2 flow rate of 1700 sccm,diffusion nitrogen flow rate of 2300 sccm,and source time and redistribution time of 250 s and 700 s,respectively.The peak power of the module formed by the battery prepared according to the method of diffusing phosphorus three times under the condition of(85℃+85%RH+minus1000V+96H)is attenuated by 0.62%,which meets the anti-PID requirement that the peak power change is less than 5%.

关 键 词：电势诱导衰减 三次通源磷扩散 方块电阻 峰值功率衰减 

分 类 号：TM914.41[电气工程—电力电子与电力传动]