L波段高功率单刀双掷开关设计与实现  

Design and Realization of L-Band High Power Single-Pole Double-Throw Switch

作　　者：赵桂铖 要志宏[1] ZHAO Gui-cheng;YAO Zhi-hong(The 13th Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微波学报》2022年第1期81-84,89,共5页Journal of Microwaves

摘　　要：选用PIN二极管设计了一款工作在L波段的高功率单刀双掷(SPDT)开关,能耐受100 W连续波功率信号。开关采用串并联结构,增大开关的隔离度的同时拓宽了带宽。通过厚膜工艺、丝网印刷制作微带线、微组装工艺完成各个器件焊接互联,完成开关的制作。开关采用-5 V/+30 V的偏置电压进行控制。实测表明:该单刀双掷开关在1~2 GHz内,插入损耗小于0.7 dB,频带内输入驻波比和输出驻波比均小于1.4,隔离度大于25 dB,在连续波100 W功率下,二极管最高温度为122.6℃,满足设计需求。A PIN diode is used to design a high-power single-pole double-throw(SPDT) switch that works in the L-band, which can withstand a 100 W continuous wave power signal. The switch adopts a series-parallel structure, which increases the isolation of the switch while broadening the bandwidth. The microstrip line is made through thick film process and screen printing, and the micro-assembly process completes the welding and interconnection of each device, and completes the production of the switch. The switch is controlled by a bias voltage of-5 V/+30 V. The actual measurement shows that the insertion loss of the single-pole double-throw switch is less than 0.7 dB within 1-2 GHz, the input standing wave ratio and output standing wave ratio are both less than 1.4, and the isolation is greater than 25 dB. Under continuous wave power of 100 W, the maximum diode temperature is 122.6 ℃, meet the design requirements.

关 键 词：PIN二极管 单刀双掷开关 高功率 

分 类 号：TM564[电气工程—电器]