分数阶记忆元件转换关系的研究  

Study on conversion relationship of fractional-order memory elements

作　　者：尚涛[1] 甘朝晖[1] 余磊 左自辉 SHANG Tao;GAN Zhaohui;YU Lei;ZUO Zihui(Wuhan University of Science and Technology,Wuhan 430081,China;China Academy of Railway Sciences Corporation Limited,Beijing 100081,China)

机构地区：[1]武汉科技大学,湖北武汉430081 [2]中国铁道科学研究院集团有限公司,北京100081

出　　处：《微电子学与计算机》2022年第1期88-94,共7页Microelectronics & Computer

摘　　要：记忆元件作为新型电路元件,其特殊的记忆特性引起了科研人员的广泛关注.从记忆元件的本构方程出发,推导出了记忆元件之间的转换关系,仿真实现了三种分数阶记忆元件之间的相互转换.仿真实验结果验证了分数阶记忆元件之间相互转换关系式的正确性.同时,也详细分析了分数阶阶次对记忆元件影响的规律.As a new type of circuit elements,the special memory characteristics of memory elements have attracted extensive attention of researchers.Based on the constitutive equation of memory elements,the conversion relationship between memory elementsis deduced,and the conversion between three kinds of fractional-order memory elements is simulated.The simulation results verify the correctness of the conversion relationship between fractional-order memory elements.At the same time,the influence of fractional order on memory elements is analyzed in detail.

关 键 词：记忆元件 本构方程 分数阶 

分 类 号：TN601[电子电信—电路与系统]