MoS_(2)纳米薄膜及纳米线结构制备研究  

Preparation of MoS_(2) Nano Films and Nanowires

作　　者：成桢 郭炳瑞 CHIEN Zhen;GUO Bing-rui(School of Mechanical and Material Engineering,Xi′an University,Xi′an 710065,Shaanxi,China;Shaanxi Key Laboratory of Surface Engineering and Remanufacturing,Xi′an 710065,Shaanxi,China)

机构地区：[1]西安文理学院机械与材料工程学院,陕西西安710065 [2]陕西省表面工程与再制造重点实验室,陕西西安710065

出　　处：《中国钼业》2022年第1期28-32,共5页China Molybdenum Industry

基　　金：陕西省教育厅科研计划重点实验室项目(编号21JS036);中国科学院瞬态光学与光子技术国家重点实验室开放基金(编号SKLST201904);国家级大学生创新创业训练项目(编号S202111080021)。

摘　　要：使用射频磁控溅射法在硅和玻璃衬底上制备系列MoS_(2)纳米薄膜,并利用SEM、XRD对薄膜的表面形貌和微观结构进行表征,分析了衬底、功率和退火温度等制备条件对MoS_(2)纳米薄膜表面形貌及结晶状况的影响。研究结果表明:退火温度对薄膜的表面形貌的再次生长有明显作用,在溅射功率40 W、本底真空4.0×10^(-4) Pa、工作气压3 Pa、溅射时间4 h的条件下可以制备较为平整的MoS_(2)薄膜,尤其在退火温度300℃时MoS_(2)薄膜表面可以生长出直径约为50 nm、长度为1.8μm的纳米线。A series of MoS_(2) nano-films were prepared on silicon and glass substrates by Radio Frequency Magnetron Sputtering.The surface morphology and microstructure of the films were characterized by Scanning Electron Microscope(SEM)and X-Ray Diffraction(XRD).The effects of substrate,power and annealing temperature on the surface morphology and crystallization of MoS_(2) nano-films were analyzed.The results show that the annealing temperature has an obvious effect on the re-growth of the surface morphology of the MoS_(2) films under the conditions of sputtering power 40 W,background vacuum 4.0x10-4 pa,working pressure 3 Pa and sputtering time 4 h,relatively flat MoS_(2) films can be prepared.Especially at annealing temperature 300℃,MoS_(2) nanowires with diameter of about 50 nm and length of 1.8μm can grow on the surface of MoS_(2) films.

关 键 词：磁控溅射 MoS_(2)纳米薄膜 表面形貌 微观结构 纳米线 

分 类 号：TB383[一般工业技术—材料科学与工程]