IGBT模块测试适配器设计及寄生电感提取方法  

Design of IGBT Module Test Adapter and Method of Parasitic Inductance Extraction

作　　者：吕贤亮[1] 陈中圆 麻力[1] 李旭 LV Xianliang;CHEN Zhongyuan;MA Li;LI Xu(China Electronics Standardization Institute,Beijing 100176,China;Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China)

机构地区：[1]中国电子技术标准化研究院,北京100176 [2]全球能源互联网研究院有限公司,北京102209

出　　处：《电子工艺技术》2022年第2期94-97,108,共5页Electronics Process Technology

摘　　要：分析了大功率绝缘栅门极晶体管(IGBT)模块测试适配器寄生电感的构成及其形成机理。通过理论分析及Q3D建模仿真叠层母排结构适配器并提取寄生电感,分析适配器寄生电感的计算方式,并通过原装进口适配器与设计制作的适配器进行测试试验,得到两者的寄生电感相当。试验结果表明,叠层母排结构适配器可以有效降低其寄生电感,并且通过IGBT模块开通阶段的波形参数可准确得到适配器的寄生电感。The composition and formation mechanism of parasitic inductance of high-power IGBT module test adapter are analyzed.Through theoretical and Q3D modeling and simulation of the laminated bus structure adapter,the parasitic inductance of the adapter is extracted,the calculation method of the parasitic inductance of the test adapter is theoretically analyzed,and the test is carried out through the original imported adapter and the designed adapter,the parasitic inductance of the two is equivalent.The test results show that the stacked bus adapter can effectively reduce its parasitic inductance,and the parasitic inductance of the adapter can be accurately obtained through the waveform parameters in the opening stage of IGBT module.

关 键 词：IGBT模块 寄生电感 叠层母排 测试适配器 

分 类 号：TN605[电子电信—电路与系统]