基于MEMS惯性传感器中数字滤波器的器件设计  

Device design based on digital filter in MEMS inertial sensor

作　　者：莫泽宁 蒋志迪[1,2] 胡建平 MO Zening;JIANG Zhidi;HU Jianping(Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,China;College of Science&Technology,Ningbo University,Ningbo 315211,China)

机构地区：[1]宁波大学信息科学与工程学院,浙江宁波315211 [2]宁波大学科学技术学院,浙江宁波315211

出　　处：《传感器与微系统》2022年第3期83-86,90,共5页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(61671259);浙江省自然科学基金资助项目(LY19F010005)。

摘　　要：针对微机电系统(MEMS)惯性传感器中数字信号处理电路的功耗问题,提出了两种新型场效应晶体管。两种晶体管分别被命名为具有“并联”开关功能的三输入双沟道场效应晶体管(Ti-DCFET)和具有“串联”开关功能的三输入独立栅场效应晶体管(Ti-IGFET)。两种新器件由于具有特殊的开关功能,因此,能够在器件层面将数字滤波器中用到的加法器和乘法器的电路结构简化,从而降低整个MEMS的功耗。对新器件的电流特性进行理论分析并且得到了简化的理论计算公式。公式的计算结果与Silvaco TCAD仿真结果一致。与传统的单输入晶体管相比,提出的器件通过大幅度减少电路中晶体管数量来降低MEMS的功耗。Aiming at the problem of power consumption of digital signal processing circuit in MEMS inertial sensor,two new type of field effect transistors are proposed in this paper.The two transistors are named as tri-input dual-channel field effect transistor with parallel switching function(Ti-DCFET)and tri-input independent-gate field effect transistor with series switching function(Ti-IGFET).The two new devices are able to simplify the structure of the adder and multiplier circuits used in digital filters at the device level due to their special switching functions,thus reduce the power consumption of the MEMS.The current characteristics of the two novel devices are analyzed theoretically,and simplified theoretical calculation formulas are derived.The calculation result of the formulas are consistent with the Silvaco TCAD simulation results.Compared with the traditional field effect transistors with a single-input terminal,the proposed devices can be used to reduce power consumption of the MEMS by reducing transistor number in circuit.

关 键 词：新器件 微机电系统 电路简化 低功耗 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN386.1[自动化与计算机技术—控制科学与工程]