硅基GaN微腔制作及其激射特性(特邀)  

Fabrication and Lasing Properties of Silicon-based GaN Microcavities(Invited)

作　　者：马立龙 谢敏超 欧伟 梅洋 张保平 MA Lilong;XIE Minchao;OU Wei;MEI Yang;ZHANG Baoping(Laboratory of Micro/Nano-Optoelectronics,School of Electronic Science and Engineering,Xiamen University,Xiamen,Fujian 361005,China)

机构地区：[1]厦门大学电子科学与技术学院微纳光电子研究室,福建厦门361005

出　　处：《光子学报》2022年第2期53-61,共9页Acta Photonica Sinica

基　　金：国家重点研究发展计划(No.2017YFE0131500);国家自然科学基金(No.62104204);厦门大学校长基金(No.ZK1029)。

摘　　要：提出了一种新的Si衬底上GaN微盘谐振腔的制备方式,避免了传统Si基GaN器件中晶体质量较差以及外延层较厚对器件性能的影响。本工作中GaN的外延生长使用蓝宝石衬底,随后将外延层转移至硅衬底上进行微盘谐振腔的制备。外延生长时靠近衬底侧的GaN富缺陷层可使用减薄抛光的方式去除,并且通过简单湿法刻蚀二氧化硅牺牲层即可实现GaN微盘与Si衬底之间的空气间隙结构。基于较好的晶体质量与低损耗的谐振腔,实现了高Q值的Si基GaN微盘谐振腔低阈值激射,阈值能量低至5.2 nJ/pulse,Q值最高为10487。同时,器件具有较好的温度稳定特性,在100℃环境下也能维持低阈值激射,为大规模单片硅基光子集成提供了高性能的激光源。Semiconductor microcavities can restrict photons in a small volume compared to the wavelength of light,and can artificially adjust the spontaneous emission characteristics of the active medium in the cavity,which is important for the development of more efficient optoelectronic devices.At the same time,semiconductor microcavities also provide a good platform for the fundamental research of cavity quantum electrodynamics.Optoelectronic devices based on semiconductor microcavity have been widely used,such as microcavity lasers,microcavity sensors,microcavity optical filters,etc.Optical microcavities are usually divided into three types:Fabry-Pérot(FP)microcavities,Photonic Crystal(PC)microcavities,and Whispering-gallery Mode(WGM)microcavities.In WGM semiconductor microcavities,photons circulate along the sidewall of the waveguide layer,and the optical field is confined by total reflection at the interface between the waveguide layer and the surrounding air.Therefore,WGM microcavities can achieve high quality(Q)value and small mode volume.Compared with the FP and PC microcavities,WGM microcavities have the advantages of simple structure,convenient preparation,and easy integration with large scale optoelectronic circuits.GaN based semiconductor materials are featured with direct wide bandgap,including aluminum nitride,gallium nitride,indium nitride,and a variety of alloys between them.By adjusting the composition of the alloy,the emission wavelength can cover from deep ultraviolet to the near-infrared band.They are very important for the preparation of optoelectronic devices.In addition,GaN based semiconductor materials with high exciton binding energy and oscillator strength can be combined with WGM microcavity to achieve micro-cavity optoelectronic devices with small size and high efficient,which can be used for cavity quantum electrodynamics studies at room temperature.Therefore,GaN-based WGM microcavity light-emitting devices have attracted the attention of many researchers,and have been widely used in optoelect

关 键 词：半导体器件与技术 微腔 氮化镓 硅 高品质因子 低阈值 高温工作 

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