连续工作7.5 W高功率氮化镓基蓝光激光器(特邀)  

High-power GaN-based Blue Laser Diodes with 7.5 W of Light Output Power Under Continuous-wave Operation(Invited)

作　　者：胡磊 李德尧[1] 刘建平[1] 田爱琴 王旦 张涛[1] 吴思 徐鹏 杨辉[1] HU Lei;LI Deyao;LIU Jianping;TIAN Aiqin;WANG Dan;ZHANG Tao;WU Si;XU Peng;YANG Hui(Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China;Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology,Foshan,Guangdong 528000,China)

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123 [2]广东中科半导体微纳制造技术研究院,广东佛山528000

出　　处：《光子学报》2022年第2期97-102,共6页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2017YFE0131500);广东省重点研发计划(No.2020B090922001);国家自然科学基金(Nos.61834008,61804164);江苏省重点研发计划(Nos.BE2020004,BE2021008-1);广东省基础与应用基础研究基金(No.2019B1515120091)。

摘　　要：高功率氮化镓基蓝光激光器在激光显示、激光照明和材料加工等领域具有广泛的应用前景。通过优化GaN基蓝光激光器的封装结构,采用双面封装方式,将热阻降到6.7 K/W,特征温度T0提高到235 K。脊宽45μm、腔长1200μm双面封装蓝光激光器的阈值电流密度为1.1 kA/cm^(2),斜率效率为1.4 W/A,在6 A电流工作下,室温连续工作光输出功率达到了7.5 W。Gallium Nitride(GaN)-based materials have the characteristics of large band gap,high electron mobility,high thermal conductivity,etc.,which are used in various electronic devices and optoelectronic devices,and have received extensive attention.High power GaN-based blue laser diodes(LDs)have great prospects in laser display,laser lighting,metal processing and other fields.However,the development of high-power GaN-based blue lasers is extremely difficult,mainly related to the difficulties of epitaxial growth,processing and packaging technology.Firstly,the epitaxial structure of blue laser is complicated,and the crystal quality needs to be ensured while improving the luminous efficiency of the quantum well and reducing the light absorption loss.Secondly,the sidewall loss and cavity surface loss need to be reduced during the manufacturing process.Last but not least,a low thermal resistance packaging technology needs to be developed,so that high-power GaN-based blue lasers can effectively dissipate heat.In this work,by adopting the double-sided packaging method for GaN-based blue lasers,which use the copper fully attached to the N-side of the blue laser to increase the heat dissipation.According to the change in the forward voltage caused by the junction temperature change,the thermal resistance of the single-sided packaged blue laser is 8.5 K/W,while the double-sided packaged blue laser has a thermal resistance of6.7 K/W.It can be found that the GaN-based blue laser with double-sided packaging has lower thermal resistance and can dissipate heat more effectively,which is beneficial for the high-power blue laser to work under continuous room temperature conditions.According to the power-current curves of the blue laser from room temperature to 65℃,the characteristic temperature of the single-sided packaged blue laser is132 K,and the characteristic temperature of the double-sided packaged blue laser is 235 K,it is found that the characteristic temperature of the double-sided packaged blue laser is higher,which means t

关 键 词：激光器 氮化镓 双面封装 热阻 特征温度 光输出功率 

分 类 号：TN248.4[电子电信—物理电子学]