氮极性GaN/In_(0.17)Al_(0.83)N高电子迁移率晶体管材料机理与器件特性分析  

Theoretical Analysis of Material Mechanism and Device Characteristics in N-Polar GaN/In_(0.17)Al_(0.83)N High Electron Mobility Transistor

作　　者：王现彬[1] 高彦彦[1] 周淑芬[2] WANG Xianbin;GAO Yanyan;ZHOU Shufen(Mechanical and Electrical Colleget Shi Jia Zhuang University,Shijiazhuang 050000,China;Shijiazhuang Posts and Telecommunications Technical College,Shijiazhuang 050000,China)

机构地区：[1]石家庄学院机电学院,石家庄050000 [2]石家庄邮电职业技术学院,石家庄050000

出　　处：《真空科学与技术学报》2022年第2期151-158,共8页Chinese Journal of Vacuum Science and Technology

基　　金：教育部产学合作协同育人项目(202002288020)。

摘　　要：晶格匹配的氮极性(N-polar)GaN/In_(0.17)Al_(0.83)N异质结以其优异的材料与电特性受到了研究者的广泛关注。通过自洽求解薛定谔方程和泊松方程,结合准二维模型,模拟计算了N-polar GaN/In_(0.17)Al_(0.83)N高电子迁移率晶体管(HEMT)相关材料与器件特性。分析显示GaN沟道层、In_(0.17)Al_(0.83)N背势垒层和Al N插入层厚度增大都可以提升二维电子气(2DEG)面密度和限阈性,且其影响度依次增大。GaN沟道层厚度高于10 nm或In_(0.17)Al_(0.83)N背势垒层厚度高于25 nm后2DEG面密度有饱和趋势,而Al N插入层的引入使2DEG面密度增幅更大,同时也提升了In_(0.17)Al_(0.83)N背势垒层材料质量和异质结内2DEG迁移率及限阈性。准二维模型计算表明N-polar GaN/Al N/In_(0.17)Al_(0.83)N HEMT器件最大漏电流和峰值跨导分别为160 m A·mm^(-1)和84.5 m S·mm^(-1)。Lattice matched N-polar Ga N/In_(0.17)Al_(0.83)N heterojunctions have attracted much attention due totheir excellent material and electrical properties.The material and device properties of N-polar Ga N/In_(0.17)Al_(0.83)Nhigh electron mobility transistor(HEMT)were simulated by self-consistently solving the Schrodinger equation andPoisson equation and quasi two-dimensional model.The analysis shows that the increase of Ga N channel layer,In_(0.17)Al_(0.83)N barrier layer and Al N insertion layer thickness can improve two-dimensional electron gas(2DEG)sheetdensity and confinement,and the influence degree increases in turn.When the thickness of Ga N channel layer ishigher than 10 nm or the thickness of In_(0.17)Al_(0.83)N back barrier layer is higher than 25 nm,the 2DEG surface densitytends to be saturated.The introduction of the Al N insertion layer makes the 2DEG sheet density increase more greatly,and also improves the material quality of In_(0.17)Al_(0.83)N back barrier,mobility and confinement in heterojunction.Finally,the quasi two-dimensional model calculation shows that the maximum leakage current and peak transcon-ductance of N-polar Ga N/Al N/In_(0.17)Al_(0.83)N HEMT are 160 m A·mm^(-1)and 84.5 m S·mm^(-1),respectively.

关 键 词：氮极性 GaN/InAlN异质结 自洽求解 二维电子气 准二维模型 

分 类 号：TN386[电子电信—物理电子学]