一种碳化硅器件三电平电路的损耗计算方法  

Loss calculation method for three-level circuit based on silicon carbide device

作　　者：吕志通 李雪[1,2] 迟颂[1,2] Lv Zhitong;Li Xue;Chi Song(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300130,China;Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability of Hebei Province,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]省部共建电工装备可靠性与智能化国家重点实验室(河北工业大学),天津300130 [2]河北省电磁场与电器可靠性重点实验室(河北工业大学),天津300130

出　　处：《电测与仪表》2022年第3期75-81,共7页Electrical Measurement & Instrumentation

基　　金：河北省高层次人才资助项目(E2015100007)。

摘　　要：三电平电路较之两电平电路,斩波频率高,谐波小,有利于滤波器的优化设计,以及能更好地用于高速电机的驱动。三电平电路中开关器件的损耗是影响逆变器性能的主要因素,而传统的IGBT损耗计算方法不适用于SiC MOSFET,且常用的物理模型方法计算量较大,因此,为了精确且简便地计算分析开关器件的损耗,通过平均值法和SiC器件的损耗参数研究了三电平I型和T型拓扑电路的损耗大小关系。采用PLECS软件进行仿真实验,实验结果与上述计算结果一致,验证了该损耗计算方法的可行性。Compared with two-level circuit,three-level circuit has higher chopper frequency and lower harmonic,which is beneficial to the optimal design of the filter and can be better used to drive the high-speed motor.The loss of switching device in three-level circuit is the main factor that affects the performance of inverter,however,the loss calculation method of IGBT is not applicable to SiC MOSFET,and the common physical model method requires a large amount of calculation.Therefore,in order to accurately and easily calculate the loss of the switching device,the loss relationship between the three-level I-type and T-type topologies is studied by the mean value method and the loss parameters of the SiC device.Finally,the simulation experiment is carried out by using PLECS software.The experimental results are consistent with the above calculation results,and the feasibility of the loss calculation method is verified.

关 键 词：碳化硅器件 三电平电路 平均值法 损耗参数 损耗计算 

分 类 号：TM464[电气工程—电器]