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作 者:朱泽华 王俊强 陈绪文 齐越 ZHU Zehua;WANG Junqiang;CHEN Xuwen;QI Yue(School of Instrument and Electronics,North University of China,Taiyuan 030051,China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,China)
机构地区:[1]中北大学仪器与电子学院,山西太原030051 [2]中北大学前沿交叉科学研究院,山西太原030051
出 处:《电子元件与材料》2022年第3期304-308,共5页Electronic Components And Materials
基 金:国家自然科学基金(61804137);国防科技173计划技术领域基金(2021JCJQJJ0172)。
摘 要:针对石墨烯MEMS压力传感器气密性封装的需求,设计出一种用于石墨烯MEMS压力传感器芯片级Au/Sn共晶键合工艺方法。石墨烯压力传感器芯片键合密封环金属采用50/400 nm的Cr/Au,基板键合密封环金属采用50/400/500/3 nm的Cr/Au/Sn/Au。随后使用倒装焊机在280℃以及8 kN的压力环境下保持6 min,完成芯片与基板的Au/Sn互溶扩散键合工艺,从而实现石墨烯压力传感器芯片的气密性封装。对键合指标进行测试,平均剪切力达20.88 MPa,平均漏率为4.91×10^(-4) Pa·cm^(3)/s,满足GJB548B-2005的要求。通过比较键合前后的芯片电学特性,石墨烯敏感结电阻平均值变化了1.1%,具有较高的稳定性。此外键合界面能谱测试结果符合Au/Sn键合金属合金元素组分,为石墨烯MEMS压力传感器低成本、高效率气密性封装奠定了基础。A chip-level Au/Sn eutectic bonding process for graphene micro-electro-mechanical(MEMS)pressure sensor was designed to meet the requirement of hermetic packaging.The sealing ring metal material of the graphene pressure sensor chip bonding was Cr/Au-50/400 nm,and the based plate bonding material was Cr/Au/Sn/Au-50/400/500/3 nm.Then,the mutual soluble diffusion bonding process of Au/Sn was realized by a flip chip bonder at 280℃for 6 min with a pressure of 8 kN,was completed,and the hermetic packaging of graphene pressure sensor chip was realized.The test results of the bonding parameters show that the average shear stress is 20.88 MPa and the average leakage rate is 4.91×10^(-4) Pa·cm^(3)/s,which meet the requirements of GJB548 B-2005.Comparing the electrical characteristics of the chip before and after bonding,the graphene-sensitive junction resistance shows high stability with an average change of 1.1%.Additionally,the interfacial composition of Au/Sn wafers was detected with EDS spectrum,which was consistent with the composition of the alloy.This work provides a good foundation for the low cost and high efficiency hermetic packaging for graphene MEMS pressure sensor.
关 键 词:石墨烯 MEMS压力传感器 Au/Sn键合 气密封装
分 类 号:TN305.94[电子电信—物理电子学]
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