原子层沉积法制备SnO_(2)薄膜及其对钙钛矿电池性能的影响  

SnO_(2) Thin Film Prepared by Atomic Layer Deposition Technology and Its Effect on the Performance of Perovskite Solar Cells

作　　者：明帅强 王浙加 吴鹿杰 冯嘉恒 高雅增 卢维尔[1,2] 夏洋 MING Shuaiqiang;WANG Zhejia;WU Lujie;FENG Jiaheng;GAO Yazeng;LU Weier;XIA Yang(Microelectronic Instrument and Equipment Research Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 101407,China;Jiaxing Kemin Electronic Equipment Technology Co.,Ltd.,Jiaxing 314022,Zhejiang,China;School of Science,Beijing Jiaotong University,Beijing 100044,China)

机构地区：[1]中国科学院微电子研究所微电子仪器设备研究中心,北京100029 [2]中国科学院大学微电子学院,北京101407 [3]嘉兴科民电子设备技术有限公司,浙江嘉兴314022 [4]北京交通大学理学院,北京100044

出　　处：《材料导报》2022年第7期122-127,共6页Materials Reports

基　　金：国家重点研发计划(2018YFF0109100);国家自然科学基金(61427901)。

摘　　要：本工作以单晶硅为衬底、四(二甲氨基)锡和水为前驱体,研究原子层沉积技术制备氧化锡薄膜的工艺及其光学和电学性能,并将其应用于钙钛矿太阳能电池。通过调节基底温度,详细研究了沉积温度对SnO_(2)薄膜的沉积速率、电学、光学等特性的影响,采用钙钛矿太阳能电池器件辅助验证SnO_(2)薄膜的性能。研究发现,随着基底温度的升高,沉积速率逐渐下降,原子层沉积的温度窗口在120~250℃;折射率随着温度的升高逐渐增大,带隙随温度升高而减小;沉积温度越高,表面氧空位缺陷浓度越大。SnO_(2)薄膜的工艺温度对钙钛矿太阳能电池性能有较大影响,采用160℃沉积的SnO_(2)薄膜作钙钛矿太阳能电池的电子传输层,可获得最优的电池性能,反扫最高效率为18.68%,此时器件的截止电压为1.077 V,短路电流密度为23.67 mA/cm^(2),填充因子为73.3%,且器件具有较小的迟滞效应。In this work,tin oxide(SnO_(2))thin film was prepared through atomic layer deposition technology with monocrystalline silicon as substrate,te-trakis(dimethylamino)tin and water as the precursor sources.Its optical,electrical properties and application in perovskite solar cell devices were characterized.Through adjusting the temperature of substrates,the effect of deposition temperature on SnO_(2)film deposition rate,and electrical and optical properties were studied in detail,and the performance of perovskite solar cells was analyzed.The results indicate that with tetrakis(dimethylamino)tin and water as precursors,the deposition rate decreases gradually with the increase of temperature,and the atomic layer deposition temperature window is between 120℃and 250℃;the refractive index also increases with temperature.As the temperature increases gradually,the band gap decreases;the higher the deposition temperature is,the higher the surface oxygen vacancy concentration is.The SnO_(2)thin film deposited at 160℃was used to prepare the perovskite solar cell device,which obtained a champion efficiency(18.68%),with a cut-off voltage of 1.077 V,a short-circuit current density of 23.67 mA/cm^(2) and a fill factor of 73.3%.The device has less hysteresis effect.

关 键 词：原子层沉积 氧化锡薄膜 生长速率 氧空位 钙钛矿 太阳能电池 

分 类 号：TB321[一般工业技术—材料科学与工程]