IC铜布线抛光及后清洗中缓蚀剂BTA吸附及去除的研究进展  

Progress in research on adsorption and removal of corrosion inhibitor BTA in polishing and subsequent cleaning of copper wires for IC applications

作　　者：王静 高宝红[1,2] 刘世桐 吴彤熙[1,2] 檀柏梅 WANG Jing;GAO Baohong;LIU Shitong;WU Tongxi;TAN Baimei(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北工业大学天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2022年第3期203-210,共8页Electroplating & Finishing

基　　金：国家自然科学基金(61704046);国家科技重大专项(2016ZX02301003-004-007)。

摘　　要：首先从吸附能的角度论述了苯并三唑(BTA)在铜上的吸附类型以及成膜过程,然后综述了关于铜化学机械抛光(CMP)后清洗中去除残留BTA的研究进展,最后对新型缓蚀剂的出现以及在集成电路制造中应用的缓蚀剂的未来研究方向进行了概述。The adsorption type and film-forming process of benzotriazole(BTA)on copper were discussed from the perspective of adsorption energy.The research progress on the removal of BTA residue in cleaning after chemical mechanical polishing(CMP)of copper was reviewed.The emergence of new corrosion inhibitors and the future research directions of corrosion inhibitors used in fabrication of integrated circuits(IC)were summarized.

关 键 词：铜 化学机械抛光 苯并三唑 吸附等温线 配合物 缓蚀剂 清洗 综述 

分 类 号：TG175[金属学及工艺—金属表面处理]