溅射功率和气压对直流磁控溅射制备钨薄膜的影响  

Influence of Sputtering Power and Gas Pressure on the Preparation of Tungsten Films by DC Magnetron Sputtering

作　　者：邢晓帅 刘影夏 于晓东[1] 程荆卫[1] 赵修臣[1] 聂志华[1] 谭成文[1] Xing Xiaoshuai;Liu Yingxia;Yu Xiaodong;Cheng Jingwei;Zhao Xiuchen;Nie Zhihua;Tan Chengwen(School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]北京理工大学材料科学与工程学院,北京100081

出　　处：《稀有金属材料与工程》2022年第2期682-688,共7页Rare Metal Materials and Engineering

摘　　要：采用DC磁控溅射技术在硅衬底上制备钨薄膜,探究了溅射功率和气压对钨薄膜沉积速率、电阻率和相结构的影响。采用原子力显微镜、XRD、轮廓仪、四探针测电阻表征了薄膜的微观结构和电学性能。结果表明,薄膜的沉积速率受溅射功率和气压共同影响,随功率的增加呈线性增加,随溅射气压的增加先达到峰值,然后下降。薄膜的电阻率和表面粗糙度的大小依赖于溅射气压,且随溅射气压的增加而增加,薄膜电阻率的增加可能是由于表面粗糙度的增加导致的。在恒定的溅射功率下,β-W的形成主要取决于溅射气压,几乎所有β-W相都在高溅射气压下形成,然而,当溅射功率足够大,在较高的气压下也会观察到部分α-W相的形成。钨薄膜中特定相结构(α-W/β-W)的形成,不仅取决于沉积气压,还与溅射功率相关,最终可能与入射到基片的原子能量相关。Using DC magnetron sputtering technology, a tungsten film was prepared on a Si substrate at room temperature. The effects of sputtering power and sputtering pressure on the deposition rate, microstructure, and phase structure of tungsten f ilms were researched. Atomic force microscope, XRD, four-probe resistance measurement, profiler, etc. were used to characterize the structure and electrical properties of the film. The results show that the deposition rate of the film is affected by the spu ttering power and the gas pressure. The deposition rate increases linearly with the increase of the power, and first increases to a peak and then decreases with the increase of the gas pressure. The resistivity and surface roughness of the film depend on the sputter ing pressure, and increase with the increase of the sputtering pressure. The increase in the resistivity of the film may be caused by the increase in the surface roughness. Under constant sputtering power, the formation of α-W mainly depends on the sputtering gas pressure. All β-W phases are formed under high pressure, but for the sputtering power is large enough, under hig her pressure, the formation of some α-W phases will also be observed. The formation of the specific phase structure( α-W/β-W) in the tungsten film is not only dependent on the deposition pressure, but also related to the sputtering power, which may be rela ted to the energy of the atoms incident on the substrate.

关 键 词：磁控溅射 钨薄膜 相结构 沉积速率 电阻率 

分 类 号：TB43[一般工业技术]